BUK625R2-30C-VB Product details
Product introduction:
BUK625R2-30C-VB is a single N-channel MOSFET in TO252 package, designed for high current and low resistance applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology and has a very low on-resistance of 6mΩ at VGS of 4.5V and 5mΩ at VGS of 10V, and a maximum drain current (ID) of 85A. BUK625R2-30C-VB provides excellent performance in situations where high current and low power consumption are required, and is suitable for a variety of high-efficiency power management and motor drive applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter| Value| Unit|
|------------------|-------------------|------|
| Package type| TO252 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 40 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 2.5 | V |
| On-resistance (RDS(ON)) | 6 (VGS=4.5V) | mΩ |
| On-resistance (RDS(ON)) | 5 (VGS=10V) | mΩ |
| Maximum drain current (ID) | 85 | A |
| Technology| Trench | |
Domain and module applications:
1. **High-Efficiency Power Switching**:
BUK625R2-30C-VB excels in high-efficiency power switching applications, especially where low on-resistance and high current handling are required. Its drain current capability up to 85A and low on-resistance help improve the efficiency of the power system and reduce power losses.
2. **Motor Drives**:
In motor drive applications, this MOSFET is capable of handling high current loads and is suitable for driving DC motors and brushless motors (BLDC). Its high current capability and low on-resistance ensure smooth operation and efficient control of the motor.
3. **DC-DC Converters**:
BUK625R2-30C-VB can be used in DC-DC converters, especially in applications that require high current and efficient conversion. Its low on-resistance improves converter efficiency, reduces power losses, and enhances overall system performance.
4. **Battery Management Systems**:
In battery management systems, this MOSFET is able to effectively control high current loads and is suitable for protection circuits and load switches. Its high current handling capability and low on-resistance help improve battery life and system stability.
5. **Solar Inverters**:
BUK625R2-30C-VB can be used in high current switching and control circuits in solar inverters. Its high current capability and low on-resistance enable it to handle the high power requirements in solar inverters and improve energy conversion efficiency.
With its high current handling capability and low on-resistance, BUK625R2-30C-VB is suitable for a variety of electronic applications that require efficient and stable performance, providing a reliable solution for power management, motor drive, and high-efficiency switching applications.
Technical support:
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