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BUK625R2-30C-VB Product details

Product introduction:

BUK625R2-30C-VB Product Introduction

BUK625R2-30C-VB is a single N-channel MOSFET in TO252 package, designed for high current and low resistance applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology and has a very low on-resistance of 6mΩ at VGS of 4.5V and 5mΩ at VGS of 10V, and a maximum drain current (ID) of 85A. BUK625R2-30C-VB provides excellent performance in situations where high current and low power consumption are required, and is suitable for a variety of high-efficiency power management and motor drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 6(mΩ) 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
BUK625R2-30C-VB Detailed parameter description

| Parameter| Value| Unit|
|------------------|-------------------|------|
| Package type| TO252 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 40 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 2.5 | V |
| On-resistance (RDS(ON)) | 6 (VGS=4.5V) | mΩ |
| On-resistance (RDS(ON)) | 5 (VGS=10V) | mΩ |
| Maximum drain current (ID) | 85 | A |
| Technology| Trench | |

Domain and module applications:

BUK625R2-30C-VB Applications and Modules

1. **High-Efficiency Power Switching**:
BUK625R2-30C-VB excels in high-efficiency power switching applications, especially where low on-resistance and high current handling are required. Its drain current capability up to 85A and low on-resistance help improve the efficiency of the power system and reduce power losses.

2. **Motor Drives**:
In motor drive applications, this MOSFET is capable of handling high current loads and is suitable for driving DC motors and brushless motors (BLDC). Its high current capability and low on-resistance ensure smooth operation and efficient control of the motor.

3. **DC-DC Converters**:
BUK625R2-30C-VB can be used in DC-DC converters, especially in applications that require high current and efficient conversion. Its low on-resistance improves converter efficiency, reduces power losses, and enhances overall system performance.

4. **Battery Management Systems**:
In battery management systems, this MOSFET is able to effectively control high current loads and is suitable for protection circuits and load switches. Its high current handling capability and low on-resistance help improve battery life and system stability.

5. **Solar Inverters**:
BUK625R2-30C-VB can be used in high current switching and control circuits in solar inverters. Its high current capability and low on-resistance enable it to handle the high power requirements in solar inverters and improve energy conversion efficiency.

With its high current handling capability and low on-resistance, BUK625R2-30C-VB is suitable for a variety of electronic applications that require efficient and stable performance, providing a reliable solution for power management, motor drive, and high-efficiency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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