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BUK6246-75C-VB Product details
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BUK6246-75C-VB MOSFET Product Introduction
**BUK6246-75C-VB** is a high-performance unipolar N-channel MOSFET using Trench technology in TO252 package. It is designed for applications requiring high voltage and high current carrying capacity, with excellent switching performance and low on-resistance. This MOSFET is suitable for use in high-power power management systems and other high-performance electronic systems.
**BUK6246-75C-VB** is a high-performance unipolar N-channel MOSFET using Trench technology in TO252 package. It is designed for applications requiring high voltage and high current carrying capacity, with excellent switching performance and low on-resistance. This MOSFET is suitable for use in high-power power management systems and other high-performance electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 35(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
**BUK6246-75C-VB** is mainly suitable for the following fields and modules:
1. **Power management system**: The low on-resistance (30mΩ @ VGS = 10V) and high current carrying capacity (40A) of this MOSFET make it very suitable for high-efficiency power conversion and distribution modules in power management systems, such as DC-DC converters and power supplies. It helps to reduce power consumption and improve the energy efficiency of the overall system.
2. **Automotive electronics**: In automotive electronics applications, BUK6246-75C-VB can be used in battery management systems (BMS) and power management modules for electric vehicles. Its high current handling capability and stable electrical characteristics ensure high efficiency and safety during battery charging and discharging.
3. **Industrial power and control**: In industrial power and control systems, this MOSFET can be used in high-power switching applications, such as industrial motor drives and high-power switching power supplies. It is able to operate stably under high current loads and provide efficient switching performance.
4. **Consumer Electronics**: In consumer electronics, such as TVs, computers, and other home appliances, BUK6246-75C-VB can be used in power management and protection circuits. It helps improve the stability and energy efficiency of the power module and enhances the overall performance of the product.
In summary, the TO252 package, high current carrying capacity, and low on-resistance of the BUK6246-75C-VB MOSFET make it an excellent performer in power management systems, automotive electronics, industrial power supplies, and consumer electronics. Its Trench technology ensures reliable performance in a variety of high-power and high-efficiency applications.
**BUK6246-75C-VB** is mainly suitable for the following fields and modules:
1. **Power management system**: The low on-resistance (30mΩ @ VGS = 10V) and high current carrying capacity (40A) of this MOSFET make it very suitable for high-efficiency power conversion and distribution modules in power management systems, such as DC-DC converters and power supplies. It helps to reduce power consumption and improve the energy efficiency of the overall system.
2. **Automotive electronics**: In automotive electronics applications, BUK6246-75C-VB can be used in battery management systems (BMS) and power management modules for electric vehicles. Its high current handling capability and stable electrical characteristics ensure high efficiency and safety during battery charging and discharging.
3. **Industrial power and control**: In industrial power and control systems, this MOSFET can be used in high-power switching applications, such as industrial motor drives and high-power switching power supplies. It is able to operate stably under high current loads and provide efficient switching performance.
4. **Consumer Electronics**: In consumer electronics, such as TVs, computers, and other home appliances, BUK6246-75C-VB can be used in power management and protection circuits. It helps improve the stability and energy efficiency of the power module and enhances the overall performance of the product.
In summary, the TO252 package, high current carrying capacity, and low on-resistance of the BUK6246-75C-VB MOSFET make it an excellent performer in power management systems, automotive electronics, industrial power supplies, and consumer electronics. Its Trench technology ensures reliable performance in a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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