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BUK6226-75C-VB Product details
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Product Introduction
**BUK6226-75C-VB** is a unipolar N-channel MOSFET using Trench technology, packaged in TO252. Its main features include high voltage withstand capability, low on-resistance and large continuous current carrying capacity. This MOSFET is designed for high-efficiency power management applications and is suitable for various high-power and high-frequency switching modes.
**BUK6226-75C-VB** is a unipolar N-channel MOSFET using Trench technology, packaged in TO252. Its main features include high voltage withstand capability, low on-resistance and large continuous current carrying capacity. This MOSFET is designed for high-efficiency power management applications and is suitable for various high-power and high-frequency switching modes.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**: 18mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(on))**: 18mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
**BUK6226-75C-VB** is mainly used in the following fields and modules:
1. **Power management**: This MOSFET has low on-resistance and high current capability, which is very suitable for high-efficiency power conversion modules such as DC-DC converters and power supplies. It can effectively reduce power loss and improve the overall efficiency of the system.
2. **Electric vehicles**: In the power system of electric vehicles, this MOSFET can be used in the battery management system (BMS), which is responsible for controlling and managing the charging and discharging process of the battery to ensure the safety and efficient operation of the battery.
3. **Switching circuit**: Its high current carrying capacity and low on-resistance make it an ideal choice for switching circuits, such as high-power switching power supplies and inverters. This MOSFET can maintain low power consumption and high reliability during the switching process.
4. **Consumer Electronics**: In power management modules for consumer electronics products such as laptops and TVs, this MOSFET can be used to control and optimize power supply, improving product stability and energy efficiency.
Through these application examples, it can be seen that the BUK6226-75C-VB is a versatile, high-performance MOSFET that can meet a variety of high-power and high-efficiency power management needs.
**BUK6226-75C-VB** is mainly used in the following fields and modules:
1. **Power management**: This MOSFET has low on-resistance and high current capability, which is very suitable for high-efficiency power conversion modules such as DC-DC converters and power supplies. It can effectively reduce power loss and improve the overall efficiency of the system.
2. **Electric vehicles**: In the power system of electric vehicles, this MOSFET can be used in the battery management system (BMS), which is responsible for controlling and managing the charging and discharging process of the battery to ensure the safety and efficient operation of the battery.
3. **Switching circuit**: Its high current carrying capacity and low on-resistance make it an ideal choice for switching circuits, such as high-power switching power supplies and inverters. This MOSFET can maintain low power consumption and high reliability during the switching process.
4. **Consumer Electronics**: In power management modules for consumer electronics products such as laptops and TVs, this MOSFET can be used to control and optimize power supply, improving product stability and energy efficiency.
Through these application examples, it can be seen that the BUK6226-75C-VB is a versatile, high-performance MOSFET that can meet a variety of high-power and high-efficiency power management needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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