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BUK6215-75C-VB Product details
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1. BUK6215-75C-VB Product Introduction
BUK6215-75C-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in TO-252. This MOSFET is designed based on advanced Trench technology and has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 10V, its on-resistance is very low, 5mΩ, and it can support a continuous drain current (ID) of up to 75A. This makes the BUK6215-75C-VB very suitable for applications with high current and low conduction losses, and is widely used in power management, power conversion, and high-efficiency switching applications.
BUK6215-75C-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in TO-252. This MOSFET is designed based on advanced Trench technology and has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 10V, its on-resistance is very low, 5mΩ, and it can support a continuous drain current (ID) of up to 75A. This makes the BUK6215-75C-VB very suitable for applications with high current and low conduction losses, and is widely used in power management, power conversion, and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. BUK6215-75C-VB Detailed Parameter Description
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product Model| BUK6215-75C-VB | |
| Package| TO-252 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 3 | V |
| On-Resistance (RDS(ON)) | 5 | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 75 | A |
| Instantaneous Pulse Drain Current (ID(pulse)) | 150 | A |
| Maximum power consumption (Ptot) | 125 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product Model| BUK6215-75C-VB | |
| Package| TO-252 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 3 | V |
| On-Resistance (RDS(ON)) | 5 | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 75 | A |
| Instantaneous Pulse Drain Current (ID(pulse)) | 150 | A |
| Maximum power consumption (Ptot) | 125 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications：
III. Application fields and module examples
The high current handling capability and low on-resistance of BUK6215-75C-VB enable it to excel in many fields and applications. Here are a few specific application examples:
1. **Power management**: In high-power switch-mode power supplies (SMPS) and DC-DC converters, BUK6215-75C-VB can be used as an efficient switching element to reduce conduction losses and improve overall power efficiency.
2. **Power conversion**: In industrial power converters and inverters, this MOSFET can handle high current loads, ensuring stable power conversion and system reliability.
3. **Motor control**: Due to its high current capability, BUK6215-75C-VB is suitable for electric vehicles and industrial motor drive systems, and can efficiently control the start, run and stop of the motor.
4. **Battery Management**: In a battery management system (BMS), this MOSFET can handle high current loads, provide overcurrent protection and battery switching functions, and enhance the safety of the battery system.
These application examples show the important role of BUK6215-75C-VB in high current, high efficiency switching and power conversion scenarios.
The high current handling capability and low on-resistance of BUK6215-75C-VB enable it to excel in many fields and applications. Here are a few specific application examples:
1. **Power management**: In high-power switch-mode power supplies (SMPS) and DC-DC converters, BUK6215-75C-VB can be used as an efficient switching element to reduce conduction losses and improve overall power efficiency.
2. **Power conversion**: In industrial power converters and inverters, this MOSFET can handle high current loads, ensuring stable power conversion and system reliability.
3. **Motor control**: Due to its high current capability, BUK6215-75C-VB is suitable for electric vehicles and industrial motor drive systems, and can efficiently control the start, run and stop of the motor.
4. **Battery Management**: In a battery management system (BMS), this MOSFET can handle high current loads, provide overcurrent protection and battery switching functions, and enhance the safety of the battery system.
These application examples show the important role of BUK6215-75C-VB in high current, high efficiency switching and power conversion scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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