BUK6207-30C-VB Product details
Product introduction:
**Product Name**: BUK6207-30C-VB
**Package**: TO-252
**Configuration**: Unipolar N-Channel MOSFET
The BUK6207-30C-VB is a high-performance N-Channel MOSFET suitable for applications requiring high current handling capability and low on-resistance. This MOSFET is packaged in a compact TO-252 package and utilizes advanced Trench technology to provide excellent efficiency and reliability, making it ideal for a variety of high-power electronic circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **V_DS (drain-source voltage)**: 30V
The maximum voltage that the MOSFET can withstand between the drain and source.
- **V_GS (gate-source voltage)**: ±20V
The maximum voltage allowed between the gate and source of the MOSFET.
- **V_th (gate threshold voltage)**: 1.7V
The minimum gate-source voltage required to make the MOSFET start to conduct.
- **R_DS(ON) (drain-source on-resistance)**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
The resistance between the drain and source of the MOSFET in the on state. The lower the resistance value, the better the performance, the less power loss and heat generation.
- **I_D (Continuous Drain Current)**: 100A
The maximum continuous drain current that the MOSFET can withstand.
- **Technology**: Trench
Using Trench technology, it provides excellent efficiency and low on-resistance.
Domain and module applications:
BUK6207-30C-VB MOSFET is ideal for applications requiring high current and low resistance:
1. **Power Management**:
- **High Current Switch**: Suitable for applications requiring high current switching, such as power supply systems, where its low R_DS(ON) can reduce power losses and improve efficiency.
- **DC-DC Converter**: Used in DC-DC converters for efficient power conversion and regulation, suitable for systems with strict space and heat requirements.
2. **Motor Drive**:
- **Industrial Motor Control**: Suitable for high current motor drives in industrial automation, capable of handling large currents with low heat generation.
- **Electric Vehicle**: Suitable for high power motor control in electric vehicles (EVs), providing efficient and reliable switching for drive systems.
3. **Automotive Application**:
- **Power Distribution Module**: Used in automotive power distribution systems to ensure reliable and efficient switching of high current loads.
- **Battery Management System (BMS)**: Improves BMS performance in hybrid and electric vehicles, effectively managing high current flow.
4. **Consumer Electronics**:
- **Power Supply Unit (PSU)**: Provides high efficiency for power supply units in high-power consumer electronics such as gaming computers and high-performance audio systems.
- **Charging Solution**: Provides efficient and reliable switching in charging circuits for devices that require high current charging.
BUK6207-30C-VB is an excellent choice for high-power applications with its excellent current handling capability and low on-resistance, ensuring efficient and reliable performance.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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