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BUK583-60A-VB Product details
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1. BUK583-60A-VB Product Introduction
BUK583-60A-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in SOT223. This MOSFET adopts advanced Trench technology and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 4.5V, the on-resistance is 33mΩ, and at a gate-source voltage of 10V, the on-resistance is further reduced to 28mΩ. BUK583-60A-VB supports a maximum continuous drain current (ID) of 7A, and is suitable for various application scenarios of high-efficiency switching and power management, especially for designs with high requirements on package size and performance.
BUK583-60A-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in SOT223. This MOSFET adopts advanced Trench technology and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 4.5V, the on-resistance is 33mΩ, and at a gate-source voltage of 10V, the on-resistance is further reduced to 28mΩ. BUK583-60A-VB supports a maximum continuous drain current (ID) of 7A, and is suitable for various application scenarios of high-efficiency switching and power management, especially for designs with high requirements on package size and performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 33(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. BUK583-60A-VB Detailed Parameter Description
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | BUK583-60A-VB | |
| Package | SOT223 | |
| Configuration | Single N-channel | |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 1.7 | V |
| On-Resistance (RDS(ON)) | 33 (VGS = 4.5V) | mΩ |
| | 28 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 7 | A |
| Transient pulse drain current (ID(pulse)) | 21 | A |
| Maximum power dissipation (Ptot) | 25 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | BUK583-60A-VB | |
| Package | SOT223 | |
| Configuration | Single N-channel | |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 1.7 | V |
| On-Resistance (RDS(ON)) | 33 (VGS = 4.5V) | mΩ |
| | 28 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 7 | A |
| Transient pulse drain current (ID(pulse)) | 21 | A |
| Maximum power dissipation (Ptot) | 25 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications：
III. Application fields and module examples
BUK583-60A-VB's high performance and compact package enable it to excel in many fields. Here are a few application examples:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters, BUK583-60A-VB can be used as an efficient switching element, providing low on-resistance and excellent power conversion efficiency.
2. **Small motor control**: Due to its small package and good performance, this MOSFET is particularly suitable for use in micro motor drive circuits, such as motor control in toys, household appliances, and small robots.
3. **Battery protection**: In the battery protection circuit of portable devices and mobile electronic products, BUK583-60A-VB can effectively protect the battery from overcurrent, ensuring the safety and stability of the device.
4. **LED Driver**: In LED drivers and dimmers, the low on-resistance and small package size of this MOSFET enable it to provide efficient and reliable switching functions, improving the performance of the overall lighting system.
These application examples show the important role of BUK583-60A-VB in compact design and efficient switching applications.
BUK583-60A-VB's high performance and compact package enable it to excel in many fields. Here are a few application examples:
1. **Power management**: In switching power supplies (SMPS) and DC-DC converters, BUK583-60A-VB can be used as an efficient switching element, providing low on-resistance and excellent power conversion efficiency.
2. **Small motor control**: Due to its small package and good performance, this MOSFET is particularly suitable for use in micro motor drive circuits, such as motor control in toys, household appliances, and small robots.
3. **Battery protection**: In the battery protection circuit of portable devices and mobile electronic products, BUK583-60A-VB can effectively protect the battery from overcurrent, ensuring the safety and stability of the device.
4. **LED Driver**: In LED drivers and dimmers, the low on-resistance and small package size of this MOSFET enable it to provide efficient and reliable switching functions, improving the performance of the overall lighting system.
These application examples show the important role of BUK583-60A-VB in compact design and efficient switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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