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BUK582-100N-VB Product details
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BUK582-100N-VB Product Introduction
BUK582-100N-VB is a single N-channel MOSFET in a SOT223 package designed for medium voltage and current applications. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, this MOSFET utilizes advanced trench technology to provide low on-resistance and good current handling capability. The on-resistance is 120mΩ at a VGS of 4.5V, the on-resistance is 100mΩ at a VGS of 10V, and the maximum drain current (ID) is 5A. The BUK582-100N-VB is suitable for electronic applications that require higher current and medium voltage, and can provide stable performance and efficient power control.
BUK582-100N-VB is a single N-channel MOSFET in a SOT223 package designed for medium voltage and current applications. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, this MOSFET utilizes advanced trench technology to provide low on-resistance and good current handling capability. The on-resistance is 120mΩ at a VGS of 4.5V, the on-resistance is 100mΩ at a VGS of 10V, and the maximum drain current (ID) is 5A. The BUK582-100N-VB is suitable for electronic applications that require higher current and medium voltage, and can provide stable performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 120(mΩ) | 100(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
BUK582-100N-VB Detailed parameter description
| Parameter| Value| Unit|
|------------------|-------------------|------|
| Package type| SOT223 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.8 | V |
| On-resistance (RDS(ON)) | 120 (VGS=4.5V) | mΩ |
| On-resistance (RDS(ON)) | 100 (VGS=10V) | mΩ |
| Maximum drain current (ID) | 5 | A |
| Technology| Trench | |
| Parameter| Value| Unit|
|------------------|-------------------|------|
| Package type| SOT223 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.8 | V |
| On-resistance (RDS(ON)) | 120 (VGS=4.5V) | mΩ |
| On-resistance (RDS(ON)) | 100 (VGS=10V) | mΩ |
| Maximum drain current (ID) | 5 | A |
| Technology| Trench | |
Domain and module applications：
BUK582-100N-VB Applications and Modules
1. **Power Switching**:
BUK582-100N-VB is suitable for power switching applications, especially where medium voltage (100V) and current (5A) need to be controlled. Its low on-resistance and high current capability enable it to effectively reduce power loss and improve system efficiency in power switching.
2. **Motor Control**:
In motor control systems, this MOSFET can be used to drive medium power motors. Its stable on-resistance and good current handling capability ensure the reliability and efficiency of motor drive.
3. **DC-DC Converters**:
BUK582-100N-VB is suitable for medium voltage and current conversion tasks in DC-DC converters. Its efficient switching performance and low on-resistance help improve conversion efficiency and reduce power loss.
4. **Power Management Systems**:
This MOSFET can be used for switching and regulation functions in various power management systems, and is suitable for applications requiring higher voltages and medium currents. Its high withstand voltage characteristics and low on-resistance enable it to provide stable performance in complex power management systems.
5. **LED Drivers**:
In LED driver applications, BUK582-100N-VB can be used to regulate and control the current of LEDs. Its good current handling capability and stable on-resistance ensure the brightness and efficiency of LED lamps.
With its excellent medium voltage and current handling capabilities, BUK582-100N-VB is suitable for a wide range of power management, control and drive applications, providing efficient solutions for electronic systems.
1. **Power Switching**:
BUK582-100N-VB is suitable for power switching applications, especially where medium voltage (100V) and current (5A) need to be controlled. Its low on-resistance and high current capability enable it to effectively reduce power loss and improve system efficiency in power switching.
2. **Motor Control**:
In motor control systems, this MOSFET can be used to drive medium power motors. Its stable on-resistance and good current handling capability ensure the reliability and efficiency of motor drive.
3. **DC-DC Converters**:
BUK582-100N-VB is suitable for medium voltage and current conversion tasks in DC-DC converters. Its efficient switching performance and low on-resistance help improve conversion efficiency and reduce power loss.
4. **Power Management Systems**:
This MOSFET can be used for switching and regulation functions in various power management systems, and is suitable for applications requiring higher voltages and medium currents. Its high withstand voltage characteristics and low on-resistance enable it to provide stable performance in complex power management systems.
5. **LED Drivers**:
In LED driver applications, BUK582-100N-VB can be used to regulate and control the current of LEDs. Its good current handling capability and stable on-resistance ensure the brightness and efficiency of LED lamps.
With its excellent medium voltage and current handling capabilities, BUK582-100N-VB is suitable for a wide range of power management, control and drive applications, providing efficient solutions for electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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