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BUK438-800B-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**BUK438-800B-VB** is a high voltage, high power single N-channel MOSFET in TO247 package. Designed to handle high voltage and high power applications, this MOSFET has a drain-source voltage (VDS) of 850V and a continuous drain current (ID) of 10A. Using Plannar technology, it can provide stable performance under high voltage conditions and is suitable for various application scenarios that require high voltage switch control. Its higher on-resistance (RDS(ON)) is relatively high, but it still performs well in high voltage applications.
**BUK438-800B-VB** is a high voltage, high power single N-channel MOSFET in TO247 package. Designed to handle high voltage and high power applications, this MOSFET has a drain-source voltage (VDS) of 850V and a continuous drain current (ID) of 10A. Using Plannar technology, it can provide stable performance under high voltage conditions and is suitable for various application scenarios that require high voltage switch control. Its higher on-resistance (RDS(ON)) is relatively high, but it still performs well in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | 1150(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Model**: BUK438-800B-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Plannar
- **Model**: BUK438-800B-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
3. Application fields and module examples
**1. High-voltage power converters**:
BUK438-800B-VB is suitable for switch control in high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. Its drain-source voltage of 850V allows it to handle high-voltage power supplies, and despite the relatively high on-resistance, it is able to provide stable performance in high-voltage applications.
**2. AC motor drive systems**:
In AC motor drive systems, this MOSFET can be used for switch control of high-voltage motors. Its high voltage tolerance makes it suitable for handling high-voltage drive applications, ensuring stable and efficient operation of the motor.
**3. High-voltage inverters**:
BUK438-800B-VB is also widely used in high-voltage inverters, such as solar inverters or other high-voltage inverter systems. Its high voltage and high current handling capabilities ensure the stability and reliability of the inverter.
**4. Lighting and power control systems**:
This MOSFET can be used as a high voltage switch in lighting and power control systems that require high voltage and high power. Its high voltage capability and current handling capability ensure the efficiency and stability of the system.
**5. High-voltage power supply system**:
BUK438-800B-VB is suitable for high-voltage power supply systems such as substations and high-voltage power switchgear. Its high voltage tolerance and stable performance can effectively handle the switching control needs in high-voltage power applications.
The above application examples demonstrate the key role and wide applicability of BUK438-800B-VB in high voltage and high power systems.
**1. High-voltage power converters**:
BUK438-800B-VB is suitable for switch control in high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. Its drain-source voltage of 850V allows it to handle high-voltage power supplies, and despite the relatively high on-resistance, it is able to provide stable performance in high-voltage applications.
**2. AC motor drive systems**:
In AC motor drive systems, this MOSFET can be used for switch control of high-voltage motors. Its high voltage tolerance makes it suitable for handling high-voltage drive applications, ensuring stable and efficient operation of the motor.
**3. High-voltage inverters**:
BUK438-800B-VB is also widely used in high-voltage inverters, such as solar inverters or other high-voltage inverter systems. Its high voltage and high current handling capabilities ensure the stability and reliability of the inverter.
**4. Lighting and power control systems**:
This MOSFET can be used as a high voltage switch in lighting and power control systems that require high voltage and high power. Its high voltage capability and current handling capability ensure the efficiency and stability of the system.
**5. High-voltage power supply system**:
BUK438-800B-VB is suitable for high-voltage power supply systems such as substations and high-voltage power switchgear. Its high voltage tolerance and stable performance can effectively handle the switching control needs in high-voltage power applications.
The above application examples demonstrate the key role and wide applicability of BUK438-800B-VB in high voltage and high power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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