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BUK436-60B-VB Product details
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Product Introduction
**BUK436-60B** is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO247 package. This MOSFET uses trench technology, has very low on-resistance and high current carrying capacity, and is designed for high power applications. It is suitable for power management and switching circuits that require high switching speed and high efficiency, especially in high current applications.
**BUK436-60B** is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO247 package. This MOSFET uses trench technology, has very low on-resistance and high current carrying capacity, and is designed for high power applications. It is suitable for power management and switching circuits that require high switching speed and high efficiency, especially in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: BUK436-60B
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (V_DS)**: 60V
- **Gate-source withstand voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**: 7mΩ (at V_GS = 10V)
- **Drain current (I_D)**: 150A
- **Technology**: Trench
- **Model**: BUK436-60B
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (V_DS)**: 60V
- **Gate-source withstand voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**: 7mΩ (at V_GS = 10V)
- **Drain current (I_D)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. High-power power management: **
The 150A drain current capability and 7mΩ low on-resistance of the BUK436-60B make it ideal for high-power power management applications. It can be used in high-current DC-DC converters and power switch modules to provide efficient and stable switching performance under high-power loads.
**2. Motor drive systems: **
In motor drive systems, the high current capability and low on-resistance of the BUK436-60B enable it to handle the switching and control of high-power motors. This makes it an ideal high-power switching device in motor controllers to ensure stable operation of the motor.
**3. Inverters and power converters: **
In inverters and power converters, this MOSFET can handle high-current and high-power power conversion tasks, such as in solar inverters and power conversion systems. Its high current handling capability and low on-resistance ensure efficient power conversion and stability.
**4. Battery Management System: **
BUK436-60B is suitable for high current switching and protection applications in battery management systems. It is able to handle high current loads during battery charging and discharging, providing safe overcurrent protection and efficient energy management.
**5. Automotive Electronics: **
In automotive electronic systems, this MOSFET is suitable for high power switching applications such as battery protection, power management, and high current load control. Its excellent current handling capability and low on-resistance enable it to meet the high power requirements in automotive environments.
These application examples demonstrate the wide applicability of BUK436-60B in high current and high power environments, and its excellent electrical characteristics make it an ideal choice for high performance electronic devices.
**1. High-power power management: **
The 150A drain current capability and 7mΩ low on-resistance of the BUK436-60B make it ideal for high-power power management applications. It can be used in high-current DC-DC converters and power switch modules to provide efficient and stable switching performance under high-power loads.
**2. Motor drive systems: **
In motor drive systems, the high current capability and low on-resistance of the BUK436-60B enable it to handle the switching and control of high-power motors. This makes it an ideal high-power switching device in motor controllers to ensure stable operation of the motor.
**3. Inverters and power converters: **
In inverters and power converters, this MOSFET can handle high-current and high-power power conversion tasks, such as in solar inverters and power conversion systems. Its high current handling capability and low on-resistance ensure efficient power conversion and stability.
**4. Battery Management System: **
BUK436-60B is suitable for high current switching and protection applications in battery management systems. It is able to handle high current loads during battery charging and discharging, providing safe overcurrent protection and efficient energy management.
**5. Automotive Electronics: **
In automotive electronic systems, this MOSFET is suitable for high power switching applications such as battery protection, power management, and high current load control. Its excellent current handling capability and low on-resistance enable it to meet the high power requirements in automotive environments.
These application examples demonstrate the wide applicability of BUK436-60B in high current and high power environments, and its excellent electrical characteristics make it an ideal choice for high performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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