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BSZ088N03MS G-VB Product details

Product introduction:

1. Product Introduction

**Model: BSZ088N03MS G-VB**
- **Package Type**: DFN8 (3x3)
- **Configuration**: Single N-channel MOSFET
- **Technology**: Trench

BSZ088N03MS G-VB is a high-performance N-channel MOSFET that uses advanced trench technology. This MOSFET has low on-resistance, high current handling capability and stable gate drive voltage, suitable for a variety of power management and switching applications. Its compact DFN8 (3x3) package makes it particularly suitable for space-constrained applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 60A 5(mΩ) 3.9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
2. Detailed parameter description

- **Package type**: DFN8 (3x3)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V gate drive voltage: 5mΩ
- At 10V gate drive voltage: 3.9mΩ
- **Drain current (ID)**: 60A
- **Technology**: Trench

Domain and module applications:

3. Application fields and module examples

**1. Power management**
- **Field**: Consumer electronics, telecommunications equipment, computers and servers
- **Module**: DC-DC converters, load switches, synchronous rectifiers
- **Description**: The low on-resistance and high current handling capability of BSZ088N03MS G-VB make it ideal for use in DC-DC converters to improve energy efficiency and reduce power losses. In load switch applications, this MOSFET can provide efficient switching performance for high current applications that require frequent switching. In synchronous rectifiers, its low on-resistance can significantly reduce rectification losses.

**2. Automotive electronics**
- **Field**: Electric vehicles, in-vehicle infotainment systems, automotive lighting
- **Module**: Motor drives, electronic control units (ECUs), LED drivers
- **Description**: In the motor drive of electric vehicles, BSZ088N03MS G-VB can handle high currents, provide stable performance, and ensure efficient operation of the motor. In the automotive electronic control unit (ECU), this MOSFET can handle complex power management tasks and provide reliable operation. In LED drivers, its high efficiency and low heat loss help extend the life of the LED.

**3. Industrial applications**
- **Field**: Industrial automation, smart grid, robotics
- **Module**: Power module, control system, drive circuit
- **Description**: In industrial automation and smart grid applications, the high current handling capability and low on-resistance of the BSZ088N03MS G-VB ensure efficient system operation and low energy consumption. In robotic applications, it can provide stable and efficient power drive, allowing the various components of the robot to work together more smoothly.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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