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BSZ086P03NS3 G-VB Product details

Product introduction:

Product Introduction

**BSZ086P03NS3 G-VB** is a high-performance single P-channel MOSFET manufactured using Trench technology and packaged in DFN8 (3x3). This MOSFET is designed for negative voltage, high current applications with a drain-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of 20V. It has low on-resistance and high drain current capability, making it particularly suitable for efficient power management and load switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -30V -2.5V -45A 18(mΩ) 11(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -30V -2.5V -45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -30V -2.5V -45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P
Parameter description

- **Model**: BSZ086P03NS3 G-VB
- **Package**: DFN8(3x3)
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -45A
- **Technology**: Trench

Domain and module applications:

Application fields and modules

**BSZ086P03NS3 G-VB** is mainly suitable for the following fields and modules:

1. **Power management**: Power management systems for high current loads such as DC-DC converters and load switches, providing efficient power conversion and low power loss.
2. **Load switch**: Applied in high current load switching circuits, capable of handling large load currents and ensuring stable switching performance.
3. **Electric drive system**: Suitable for high current control in electric vehicles and other electric drive systems, optimizing system performance and efficiency.
4. **Inverter**: Used in inverters and power amplifiers, providing stable negative voltage control and supporting efficient power conversion.

The low on-resistance and high current handling capability of this MOSFET make it excel in a variety of efficient power management and load switching applications, suitable for scenarios requiring high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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