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BSS192P-VB Product details
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Product Introduction
**BSS192P-VB** is a unipolar P-channel power MOSFET packaged in SOT89. This MOSFET has a drain-source voltage (VDS) of -200V and supports a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -3V, the on-resistance is 900mΩ (VGS=4.5V) and 800mΩ (VGS=10V), and the maximum leakage current is -1.8A. The MOSFET uses trench technology and is designed for high voltage and medium current switching applications.
**BSS192P-VB** is a unipolar P-channel power MOSFET packaged in SOT89. This MOSFET has a drain-source voltage (VDS) of -200V and supports a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -3V, the on-resistance is 900mΩ (VGS=4.5V) and 800mΩ (VGS=10V), and the maximum leakage current is -1.8A. The MOSFET uses trench technology and is designed for high voltage and medium current switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -200V | -3V | -1.8A | 900(mΩ) | 800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -200V | -3V | -1.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -200V | -3V | -1.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Detailed parameter description
- **Model**: BSS192P-VB
- **Package**: SOT89
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 900mΩ @ VGS = 4.5V
- 800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -1.8A
- **Technology**: Trench technology
- **Model**: BSS192P-VB
- **Package**: SOT89
- **Configuration**: Unipolar P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 900mΩ @ VGS = 4.5V
- 800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -1.8A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
**BSS192P-VB** power MOSFET is mainly used in the following fields and modules:
1. **High voltage switching circuit**: As a switching element in high voltage applications, it handles a drain-source voltage of -200V, suitable for power switches and high voltage control systems.
2. **Power protection**: Used in power protection circuits such as high voltage overvoltage protection and reverse current protection to ensure system safety and stability.
3. **Load switch**: In high voltage load switch applications, it provides efficient current control, suitable for high voltage equipment and industrial power management.
4. **Power regulation and management**: Used for current control in power regulation modules, suitable for power modules and high voltage regulators, optimizing system performance and reducing power consumption.
**BSS192P-VB** power MOSFET is mainly used in the following fields and modules:
1. **High voltage switching circuit**: As a switching element in high voltage applications, it handles a drain-source voltage of -200V, suitable for power switches and high voltage control systems.
2. **Power protection**: Used in power protection circuits such as high voltage overvoltage protection and reverse current protection to ensure system safety and stability.
3. **Load switch**: In high voltage load switch applications, it provides efficient current control, suitable for high voltage equipment and industrial power management.
4. **Power regulation and management**: Used for current control in power regulation modules, suitable for power modules and high voltage regulators, optimizing system performance and reducing power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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