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BSS138TA-VB Product details

Product introduction:

**1. Product Introduction: **

BSS138TA-VB is an N-Channel MOSFET packaged in SOT23-3. It uses Trench technology and is suitable for medium and low voltage and low current applications. It has good switching characteristics and moderate on-resistance, suitable for use in compact spaces.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 3100(mΩ) 2800(mΩ)
**2. Detailed parameter description: **

- **Package**: SOT23-3
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3100mΩ (at VGS=4.5V)
- 2800mΩ (at VGS=10V)
- **Drain Current (ID)**: 0.3A
- **Technology**: Trench

Domain and module applications:

*3. Application examples: **

BSS138TA-VB is suitable for low voltage switching, signal conditioning and low power power management applications. It is very suitable for switch control in low power electronic products, such as small power adapters, portable devices, battery-powered systems and signal switching circuits. Due to its moderate on-resistance and small package size, BSS138TA-VB performs well in space-constrained application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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