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BSP89-VB Product details
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**Product Introduction:**
BSP89-VB is an N-Channel MOSFET with SOT223 package, designed for medium and high voltage applications. The VDS (maximum drain-source voltage) of this MOSFET is 250V, the maximum gate-source voltage VGS is ±20V, and the drain current ID reaches 0.79A. Its on-resistance RDS(ON) is 2000mΩ (at VGS=10V), and it uses trench process technology, which is suitable for switching applications requiring high voltage and medium current.
BSP89-VB is an N-Channel MOSFET with SOT223 package, designed for medium and high voltage applications. The VDS (maximum drain-source voltage) of this MOSFET is 250V, the maximum gate-source voltage VGS is ±20V, and the drain current ID reaches 0.79A. Its on-resistance RDS(ON) is 2000mΩ (at VGS=10V), and it uses trench process technology, which is suitable for switching applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
**Detailed parameter description: **
- **Package**: SOT223
- **Type**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ @ VGS = 10V
- **Drain current (ID)**: 0.79A
- **Technology**: Trench process
- **Package**: SOT223
- **Type**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ @ VGS = 10V
- **Drain current (ID)**: 0.79A
- **Technology**: Trench process
Domain and module applications：
*Application areas and module examples: **
1. **High voltage switch**: In switching circuits that need to handle high voltages, the BSP89-VB can reliably switch voltages up to 250V, suitable for high voltage power management and control systems.
2. **Electronic equipment protection**: In overvoltage protection circuits of electronic equipment, this MOSFET can withstand higher voltages to prevent overvoltage from damaging the equipment.
3. **Small power switch**: In power switching applications requiring medium current, the moderate current capability and high voltage tolerance of the BSP89-VB make it an ideal choice, such as small power modules and switch control circuits.
1. **High voltage switch**: In switching circuits that need to handle high voltages, the BSP89-VB can reliably switch voltages up to 250V, suitable for high voltage power management and control systems.
2. **Electronic equipment protection**: In overvoltage protection circuits of electronic equipment, this MOSFET can withstand higher voltages to prevent overvoltage from damaging the equipment.
3. **Small power switch**: In power switching applications requiring medium current, the moderate current capability and high voltage tolerance of the BSP89-VB make it an ideal choice, such as small power modules and switch control circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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