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BSP324-VB Product details
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BSP324-VB MOSFET Product Introduction
The BSP324-VB is a high-voltage single N-channel MOSFET packaged in a SOT223 case. This MOSFET is designed for high-voltage applications and has extremely high voltage withstand capability and reliability. Its maximum drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) tolerance is ±30V, which is suitable for high-voltage power management and switching applications. The threshold voltage (Vth) of the BSP324-VB is 3.5V, ensuring reliable startup when the gate voltage reaches a certain value. Its on-resistance (RDS(ON)) is 10kΩ at VGS = 4.5V and 8kΩ at VGS = 10V, providing power delivery capabilities suitable for high-voltage applications. The continuous drain current (ID) of this MOSFET is 1A, which is suitable for handling medium current loads. The BSP324-VB uses planar technology to optimize its high-voltage characteristics and overall performance.
The BSP324-VB is a high-voltage single N-channel MOSFET packaged in a SOT223 case. This MOSFET is designed for high-voltage applications and has extremely high voltage withstand capability and reliability. Its maximum drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) tolerance is ±30V, which is suitable for high-voltage power management and switching applications. The threshold voltage (Vth) of the BSP324-VB is 3.5V, ensuring reliable startup when the gate voltage reaches a certain value. Its on-resistance (RDS(ON)) is 10kΩ at VGS = 4.5V and 8kΩ at VGS = 10V, providing power delivery capabilities suitable for high-voltage applications. The continuous drain current (ID) of this MOSFET is 1A, which is suitable for handling medium current loads. The BSP324-VB uses planar technology to optimize its high-voltage characteristics and overall performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | 10000(mΩ) | 8000(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
BSP324-VB MOSFET Detailed parameter description
- **Package type:** SOT223
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):**
- 10kΩ at VGS = 4.5V
- 8kΩ at VGS = 10V
- **Continuous drain current (ID):** 1A
- **Technology:** Planar technology
- **Package type:** SOT223
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):**
- 10kΩ at VGS = 4.5V
- 8kΩ at VGS = 10V
- **Continuous drain current (ID):** 1A
- **Technology:** Planar technology
Domain and module applications：
Application areas of BSP324-VB MOSFET
The high voltage resistance and moderate on-resistance of BSP324-VB MOSFET enable it to perform well in many fields. For example, in high-voltage power management systems, this MOSFET can be used as a high-voltage switch and power regulation module to handle high-voltage loads of 650V and ensure the stability of the system. In industrial control systems, BSP324-VB is suitable for high-voltage protection circuits and switches, providing reliable switching functions and enhancing system safety. In the field of power electronics, it can be used in high-voltage inverters and converters because its high voltage resistance characteristics can handle various challenges in high-voltage applications. In addition, this MOSFET is also suitable for high-voltage power adapters and chargers to improve overall performance and durability.
The high voltage resistance and moderate on-resistance of BSP324-VB MOSFET enable it to perform well in many fields. For example, in high-voltage power management systems, this MOSFET can be used as a high-voltage switch and power regulation module to handle high-voltage loads of 650V and ensure the stability of the system. In industrial control systems, BSP324-VB is suitable for high-voltage protection circuits and switches, providing reliable switching functions and enhancing system safety. In the field of power electronics, it can be used in high-voltage inverters and converters because its high voltage resistance characteristics can handle various challenges in high-voltage applications. In addition, this MOSFET is also suitable for high-voltage power adapters and chargers to improve overall performance and durability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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