BSP319-VB Product details
Product introduction:
**BSP319-VB** is a single-channel N-channel MOSFET with a SOT223 package type. This MOSFET uses Trench technology and is designed for medium voltage and high-efficiency applications. Its maximum drain-source voltage (VDS) is 60V, which is suitable for medium voltage environments. The maximum gate-source voltage (VGS) is ±20V, providing a wide range of drive capabilities. The on-resistance (RDS(ON)) of BSP319-VB is 33mΩ at VGS of 4.5V and 28mΩ at VGS of 10V, with lower power consumption and higher current handling capability. Its maximum drain current (ID) is 7A, suitable for handling medium current loads.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 33(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- **Model**: BSP319-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Trench technology
Domain and module applications:
1. **Power Management**:
BSP319-VB performs well in power management modules, especially in applications that require medium voltage and current switching, such as DC-DC converters and power distribution systems. Its low on-resistance can effectively reduce power consumption and improve the overall efficiency of the system.
2. **Load Switch**:
This MOSFET is suitable for a variety of load switching applications, including battery-powered devices and power switching modules. Its high current carrying capacity and low on-resistance enable it to handle large load currents, ensuring stable system operation.
3. **Motor Control**:
In motor control applications, BSP319-VB can be used for switching control of DC motors, providing reliable current control and switching performance. Its medium current handling capability is suitable for medium current loads in motor drive systems.
4. **Automotive Electronics**:
In automotive electronic systems, such as battery management systems and on-board power control, the BSP319-VB can efficiently handle current switching needs. Its medium voltage and high current capabilities make it suitable for automotive power management and switching control.
The medium voltage handling capability and high efficiency of this MOSFET make it excel in applications such as power management, load switching and motor control, providing a stable and efficient switching solution.
Technical support:
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