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BSP152-VB Product details
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Product Introduction
BSP152-VB is a high voltage single N-channel MOSFET in SOT223 package, designed for high voltage and low to medium current applications. Utilizing Trench technology, this MOSFET can operate stably at drain-source voltages up to 200V and provide a maximum drain current of 1A. Its high on-resistance and moderate current handling capability make it particularly suitable for high voltage switching and protection applications, providing reliable performance and stable switching operation.
BSP152-VB is a high voltage single N-channel MOSFET in SOT223 package, designed for high voltage and low to medium current applications. Utilizing Trench technology, this MOSFET can operate stably at drain-source voltages up to 200V and provide a maximum drain current of 1A. Its high on-resistance and moderate current handling capability make it particularly suitable for high voltage switching and protection applications, providing reliable performance and stable switching operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: BSP152-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench
- **Model**: BSP152-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High voltage switch**: The BSP152-VB MOSFET is ideal for high voltage switching applications. Its high drain-source voltage withstand capability (200V) enables it to stably perform switching operations in high voltage environments, making it suitable for a variety of applications that require high voltage switching.
2. **Power protection**: In power protection systems, this MOSFET can be used as an overvoltage protection device to help prevent damage to the circuit caused by excessive power supply voltage. Its high voltage withstand capability and medium on-resistance make it perform well in power protection applications.
3. **Power switch**: The BSP152-VB MOSFET can be used as a power switch, especially in applications that need to handle high voltages. It is suitable for controlling high voltage loads and providing stable and reliable switching operations.
4. **Relay drive**: This MOSFET is suitable for driving relays, especially in high voltage environments. Its high voltage withstand capability and stable switching performance enable it to effectively control high voltage loads and devices.
5. **Switching in high-voltage circuits**: In high-voltage circuit designs, the BSP152-VB MOSFET can handle higher drain-source voltages and low to medium currents, ensuring reliable switching operation of the circuit. Its high voltage capability is suitable for switching control of high-voltage circuits.
With its high voltage tolerance and reliable switching performance, the BSP152-VB performs well in these applications and is an ideal choice for high-voltage switching and protection applications.
1. **High voltage switch**: The BSP152-VB MOSFET is ideal for high voltage switching applications. Its high drain-source voltage withstand capability (200V) enables it to stably perform switching operations in high voltage environments, making it suitable for a variety of applications that require high voltage switching.
2. **Power protection**: In power protection systems, this MOSFET can be used as an overvoltage protection device to help prevent damage to the circuit caused by excessive power supply voltage. Its high voltage withstand capability and medium on-resistance make it perform well in power protection applications.
3. **Power switch**: The BSP152-VB MOSFET can be used as a power switch, especially in applications that need to handle high voltages. It is suitable for controlling high voltage loads and providing stable and reliable switching operations.
4. **Relay drive**: This MOSFET is suitable for driving relays, especially in high voltage environments. Its high voltage withstand capability and stable switching performance enable it to effectively control high voltage loads and devices.
5. **Switching in high-voltage circuits**: In high-voltage circuit designs, the BSP152-VB MOSFET can handle higher drain-source voltages and low to medium currents, ensuring reliable switching operation of the circuit. Its high voltage capability is suitable for switching control of high-voltage circuits.
With its high voltage tolerance and reliable switching performance, the BSP152-VB performs well in these applications and is an ideal choice for high-voltage switching and protection applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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