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BSP128-VB Product details
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Product Introduction
**BSP128-VB** is a single-channel N-channel MOSFET with a SOT223 package type. It uses Trench technology and is designed for high-voltage applications. The maximum drain-source voltage (VDS) of BSP128-VB is 200V, which is suitable for high-voltage environments. The maximum gate-source voltage (VGS) is ±20V, which makes it stable under various driving conditions. Its on-resistance (RDS(ON)) is 1200mΩ when VGS is 10V, which is suitable for handling medium current loads. The maximum drain current (ID) of this MOSFET is 1A, which can meet general current requirements.
**BSP128-VB** is a single-channel N-channel MOSFET with a SOT223 package type. It uses Trench technology and is designed for high-voltage applications. The maximum drain-source voltage (VDS) of BSP128-VB is 200V, which is suitable for high-voltage environments. The maximum gate-source voltage (VGS) is ±20V, which makes it stable under various driving conditions. Its on-resistance (RDS(ON)) is 1200mΩ when VGS is 10V, which is suitable for handling medium current loads. The maximum drain current (ID) of this MOSFET is 1A, which can meet general current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: BSP128-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Trench technology
- **Model**: BSP128-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **High voltage switching**:
BSP128-VB performs well in high voltage switching applications and is suitable for switching circuits that need to handle high voltages. For example, it can be used for high voltage power switches and load switches to ensure stable operation in high voltage environments.
2. **Power management**:
In power management modules, BSP128-VB can be used for switching control of high voltage power supplies, especially in cases where stable high voltage control is required. Its high drain-source voltage capability makes it suitable for switching elements in power management applications.
3. **Power protection**:
In power protection circuits, BSP128-VB can be used as a protection element to prevent overvoltage and overcurrent conditions. Its high voltage withstand capability and reliable switching characteristics make it suitable for applications that protect circuits from voltage surges.
4. **Voltage Regulator**:
In voltage regulator design, BSP128-VB can be used for high voltage regulation, providing stable voltage regulation. Its high voltage handling capability and stable switching performance make it a suitable choice for voltage regulation applications.
The high voltage handling capability and reliable switching performance of this MOSFET make it an excellent performer in high voltage switching, power management and protection circuits. Despite its high on-resistance, it can still provide an effective solution in situations where high voltages are handled.
1. **High voltage switching**:
BSP128-VB performs well in high voltage switching applications and is suitable for switching circuits that need to handle high voltages. For example, it can be used for high voltage power switches and load switches to ensure stable operation in high voltage environments.
2. **Power management**:
In power management modules, BSP128-VB can be used for switching control of high voltage power supplies, especially in cases where stable high voltage control is required. Its high drain-source voltage capability makes it suitable for switching elements in power management applications.
3. **Power protection**:
In power protection circuits, BSP128-VB can be used as a protection element to prevent overvoltage and overcurrent conditions. Its high voltage withstand capability and reliable switching characteristics make it suitable for applications that protect circuits from voltage surges.
4. **Voltage Regulator**:
In voltage regulator design, BSP128-VB can be used for high voltage regulation, providing stable voltage regulation. Its high voltage handling capability and stable switching performance make it a suitable choice for voltage regulation applications.
The high voltage handling capability and reliable switching performance of this MOSFET make it an excellent performer in high voltage switching, power management and protection circuits. Despite its high on-resistance, it can still provide an effective solution in situations where high voltages are handled.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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