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BSP121-VB Product details
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BSP121-VB MOSFET Product Introduction
The BSP121-VB is a high-voltage single N-channel MOSFET packaged in a SOT223 case. This MOSFET is designed for applications requiring high voltage and medium current, providing excellent voltage resistance and reliability. Its maximum drain-source voltage (VDS) is 200V and the gate-source voltage (VGS) tolerance is ±20V, making it suitable for high-voltage power management and switching applications. The threshold voltage (Vth) of the BSP121-VB is 3V, ensuring reliable startup when the gate voltage reaches a certain value. Its on-resistance (RDS(ON)) is 1200mΩ at VGS = 10V, providing sufficient power transfer capability. The continuous drain current (ID) of this MOSFET is 1A, suitable for handling medium current loads. The BSP121-VB uses advanced trench technology to optimize its switching performance and voltage resistance characteristics.
The BSP121-VB is a high-voltage single N-channel MOSFET packaged in a SOT223 case. This MOSFET is designed for applications requiring high voltage and medium current, providing excellent voltage resistance and reliability. Its maximum drain-source voltage (VDS) is 200V and the gate-source voltage (VGS) tolerance is ±20V, making it suitable for high-voltage power management and switching applications. The threshold voltage (Vth) of the BSP121-VB is 3V, ensuring reliable startup when the gate voltage reaches a certain value. Its on-resistance (RDS(ON)) is 1200mΩ at VGS = 10V, providing sufficient power transfer capability. The continuous drain current (ID) of this MOSFET is 1A, suitable for handling medium current loads. The BSP121-VB uses advanced trench technology to optimize its switching performance and voltage resistance characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
BSP121-VB MOSFET Detailed parameter description
- **Package type:** SOT223
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 200V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):**
- 1200mΩ at VGS = 10V
- **Continuous drain current (ID):** 1A
- **Technology:** Trench technology
- **Package type:** SOT223
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 200V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):**
- 1200mΩ at VGS = 10V
- **Continuous drain current (ID):** 1A
- **Technology:** Trench technology
Domain and module applications：
Application areas of BSP121-VB MOSFET
The high voltage resistance and medium on-resistance of BSP121-VB MOSFET enable it to have excellent application performance in many fields. For example, in high-voltage power management systems, this MOSFET can be used in high-voltage switches and power regulation modules to handle high-voltage loads and ensure the stability of the system. In industrial control systems, BSP121-VB can be used as a high-voltage driver and protection circuit to provide reliable switching functions and enhance the safety of equipment. In the field of automotive electronics, it is suitable for high-voltage battery management and motor control systems, because its high voltage resistance characteristics can cope with various challenges in automotive electrical systems. In addition, this MOSFET is also suitable for applications such as power adapters and chargers that require high voltage tolerance to improve overall performance and reliability.
The high voltage resistance and medium on-resistance of BSP121-VB MOSFET enable it to have excellent application performance in many fields. For example, in high-voltage power management systems, this MOSFET can be used in high-voltage switches and power regulation modules to handle high-voltage loads and ensure the stability of the system. In industrial control systems, BSP121-VB can be used as a high-voltage driver and protection circuit to provide reliable switching functions and enhance the safety of equipment. In the field of automotive electronics, it is suitable for high-voltage battery management and motor control systems, because its high voltage resistance characteristics can cope with various challenges in automotive electrical systems. In addition, this MOSFET is also suitable for applications such as power adapters and chargers that require high voltage tolerance to improve overall performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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