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BSP110-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
BSP110-VB is a high-performance single N-channel MOSFET in SOT223 package. This MOSFET uses Trench technology and is designed for medium voltage and current applications. It has a 100V drain-source voltage tolerance and low on-resistance, suitable for use in applications requiring efficient switching performance and stable current control.
BSP110-VB is a high-performance single N-channel MOSFET in SOT223 package. This MOSFET uses Trench technology and is designed for medium voltage and current applications. It has a 100V drain-source voltage tolerance and low on-resistance, suitable for use in applications requiring efficient switching performance and stable current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 120(mΩ) | 100(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description
- **Model**: BSP110-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ (@VGS=4.5V)
- 100mΩ (@VGS=10V)
- **Drain current (ID)**: 5A
- **Technology**: Trench (trench technology)
- **Model**: BSP110-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ (@VGS=4.5V)
- 100mΩ (@VGS=10V)
- **Drain current (ID)**: 5A
- **Technology**: Trench (trench technology)
Domain and module applications：
3. Applications and Modules
The BSP110-VB MOSFET excels in multiple applications due to its medium voltage capability and low on-resistance. Here are some examples of specific applications:
1. **Power Switch**:
In power switching applications, the BSP110-VB MOSFET is suitable for applications requiring medium voltage and current control. Its low on-resistance enables it to improve efficiency and reduce power losses in power switching and voltage regulation.
2. **Load Switch**:
This MOSFET performs well in load switching applications. Due to its low RDS(ON), it is able to effectively control load switching, providing reliable performance in circuits that require frequent switching of loads, such as computer motherboards and power adapters.
3. **Battery Management**:
In battery management systems, the BSP110-VB can be used for battery protection and current control. Its 100V withstand voltage is able to handle high voltage loads, while the low on-resistance helps extend battery life and improve system efficiency.
4. **LED driver circuit**:
In LED driver circuits, BSP110-VB can be used as a switching element to control the current of LEDs. Its low on-resistance can reduce power loss, improve the brightness and service life of LEDs, and is suitable for various LED lighting systems.
5. **Consumer electronics devices**:
In power management of consumer electronics devices such as smartphones and laptops, BSP110-VB is used for power switching and current control. Its high efficiency and medium current handling capability can optimize the battery life and overall performance of the device.
These application examples show the wide applicability and important role of BSP110-VB MOSFET in medium voltage and current applications, especially in key roles such as power switching, load control and LED driving.
The BSP110-VB MOSFET excels in multiple applications due to its medium voltage capability and low on-resistance. Here are some examples of specific applications:
1. **Power Switch**:
In power switching applications, the BSP110-VB MOSFET is suitable for applications requiring medium voltage and current control. Its low on-resistance enables it to improve efficiency and reduce power losses in power switching and voltage regulation.
2. **Load Switch**:
This MOSFET performs well in load switching applications. Due to its low RDS(ON), it is able to effectively control load switching, providing reliable performance in circuits that require frequent switching of loads, such as computer motherboards and power adapters.
3. **Battery Management**:
In battery management systems, the BSP110-VB can be used for battery protection and current control. Its 100V withstand voltage is able to handle high voltage loads, while the low on-resistance helps extend battery life and improve system efficiency.
4. **LED driver circuit**:
In LED driver circuits, BSP110-VB can be used as a switching element to control the current of LEDs. Its low on-resistance can reduce power loss, improve the brightness and service life of LEDs, and is suitable for various LED lighting systems.
5. **Consumer electronics devices**:
In power management of consumer electronics devices such as smartphones and laptops, BSP110-VB is used for power switching and current control. Its high efficiency and medium current handling capability can optimize the battery life and overall performance of the device.
These application examples show the wide applicability and important role of BSP110-VB MOSFET in medium voltage and current applications, especially in key roles such as power switching, load control and LED driving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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