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BSP107-VB Product details
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Product Introduction
**BSP107-VB** is a single-channel N-channel MOSFET with a SOT223 package type. This MOSFET uses Trench technology and is designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 200V, and its maximum gate-source voltage (VGS) is ±20V, which allows it to operate stably in a high-voltage environment. The on-resistance (RDS(ON)) of BSP107-VB is 1200mΩ at a VGS of 10V, making it suitable for applications that require higher voltage and medium current. The maximum drain current (ID) of this MOSFET is 1A, which allows it to handle moderate current loads.
**BSP107-VB** is a single-channel N-channel MOSFET with a SOT223 package type. This MOSFET uses Trench technology and is designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 200V, and its maximum gate-source voltage (VGS) is ±20V, which allows it to operate stably in a high-voltage environment. The on-resistance (RDS(ON)) of BSP107-VB is 1200mΩ at a VGS of 10V, making it suitable for applications that require higher voltage and medium current. The maximum drain current (ID) of this MOSFET is 1A, which allows it to handle moderate current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: BSP107-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Trench technology
- **Model**: BSP107-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High voltage switch**:
BSP107-VB performs well in high voltage switch applications and is suitable for switch circuits that need to handle high voltages, such as power switches and voltage protection circuits. Its high drain-source voltage capability enables it to operate stably in high voltage environments.
2. **Power management**:
In power management modules, BSP107-VB can be used for switching control of high voltage power supplies. Despite its high on-resistance, it can provide reliable switching functions in high voltage applications to ensure the stability of the power management system.
3. **Voltage regulator**:
In high voltage voltage regulator applications, BSP107-VB can be used to regulate voltage and provide switching control. Its high voltage tolerance makes it suitable for regulator designs that require high voltage handling.
4. **Power Protection**:
In power protection circuits, the BSP107-VB can be used as a protection element to prevent overvoltage and overcurrent conditions. Its high drain-source voltage and medium current capability make it effective in protecting circuits from high voltage damage.
The high voltage handling capability of this MOSFET makes it excel in applications such as high voltage switching, power management, and voltage regulators. Despite its high on-resistance, it still provides reliable performance in applications where high voltage control is required.
1. **High voltage switch**:
BSP107-VB performs well in high voltage switch applications and is suitable for switch circuits that need to handle high voltages, such as power switches and voltage protection circuits. Its high drain-source voltage capability enables it to operate stably in high voltage environments.
2. **Power management**:
In power management modules, BSP107-VB can be used for switching control of high voltage power supplies. Despite its high on-resistance, it can provide reliable switching functions in high voltage applications to ensure the stability of the power management system.
3. **Voltage regulator**:
In high voltage voltage regulator applications, BSP107-VB can be used to regulate voltage and provide switching control. Its high voltage tolerance makes it suitable for regulator designs that require high voltage handling.
4. **Power Protection**:
In power protection circuits, the BSP107-VB can be used as a protection element to prevent overvoltage and overcurrent conditions. Its high drain-source voltage and medium current capability make it effective in protecting circuits from high voltage damage.
The high voltage handling capability of this MOSFET makes it excel in applications such as high voltage switching, power management, and voltage regulators. Despite its high on-resistance, it still provides reliable performance in applications where high voltage control is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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