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BSL315P-VB Product details
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Product Introduction
BSL315P-VB is a dual-tube P-channel MOSFET in SOT23-6 package. The MOSFET supports -20V drain-source withstand voltage and ±12V gate-source withstand voltage, with a threshold voltage of -0.6V. Manufactured using Trench technology, it has a low on-resistance and is suitable for various low-voltage switching and power management applications.
BSL315P-VB is a dual-tube P-channel MOSFET in SOT23-6 package. The MOSFET supports -20V drain-source withstand voltage and ±12V gate-source withstand voltage, with a threshold voltage of -0.6V. Manufactured using Trench technology, it has a low on-resistance and is suitable for various low-voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Parameter description
- **Model**: BSL315P-VB
- **Package**: SOT23-6
- **Configuration**: Dual-tube P-channel
- **Drain-source withstand voltage (VDS)**: -20V
- **Gate-source withstand voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- Under 2.5V gate drive: 100mΩ
- Under 4.5V gate drive: 75mΩ
- **Drain current (ID)**: -4A
- **Technology**: Trench technology
- **Model**: BSL315P-VB
- **Package**: SOT23-6
- **Configuration**: Dual-tube P-channel
- **Drain-source withstand voltage (VDS)**: -20V
- **Gate-source withstand voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- Under 2.5V gate drive: 100mΩ
- Under 4.5V gate drive: 75mΩ
- **Drain current (ID)**: -4A
- **Technology**: Trench technology
Domain and module applications：
Applications
BSL315P-VB is suitable for the following fields and modules:
1. **Power switch**: Used in low voltage power switches to provide efficient switching control and reduce power loss.
2. **Load switch**: Suitable for various load switch applications, able to work stably under negative voltage to ensure system reliability.
3. **Battery management**: In battery management systems, it is used as a switching element to handle negative currents and provide effective power switching and protection.
4. **Switching power supply**: Used in switching power supply design as an efficient switching element to support low voltage and high current power conversion.
The low on-resistance and high current capability of this MOSFET make it excel in low voltage switching applications that require high efficiency and reliability.
BSL315P-VB is suitable for the following fields and modules:
1. **Power switch**: Used in low voltage power switches to provide efficient switching control and reduce power loss.
2. **Load switch**: Suitable for various load switch applications, able to work stably under negative voltage to ensure system reliability.
3. **Battery management**: In battery management systems, it is used as a switching element to handle negative currents and provide effective power switching and protection.
4. **Switching power supply**: Used in switching power supply design as an efficient switching element to support low voltage and high current power conversion.
The low on-resistance and high current capability of this MOSFET make it excel in low voltage switching applications that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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