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BSL306N-VB Product details
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Product Introduction
**BSL306N-VB** is a bipolar N-channel power MOSFET packaged in SOT23-6. This MOSFET has a drain-source voltage (VDS) of 20V and supports a maximum gate-source voltage (VGS) of ±12V. Its threshold voltage (Vth) ranges from 0.5 to 1.5V, the on-resistance is 28mΩ (VGS=2.5V) and 22mΩ (VGS=4.5V), and the maximum leakage current is 6A. The MOSFET uses trench technology and is suitable for switching applications that require high efficiency and small size.
**BSL306N-VB** is a bipolar N-channel power MOSFET packaged in SOT23-6. This MOSFET has a drain-source voltage (VDS) of 20V and supports a maximum gate-source voltage (VGS) of ±12V. Its threshold voltage (Vth) ranges from 0.5 to 1.5V, the on-resistance is 28mΩ (VGS=2.5V) and 22mΩ (VGS=4.5V), and the maximum leakage current is 6A. The MOSFET uses trench technology and is suitable for switching applications that require high efficiency and small size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Model**: BSL306N-VB
- **Package**: SOT23-6
- **Configuration**: Bipolar N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
- **Model**: BSL306N-VB
- **Package**: SOT23-6
- **Configuration**: Bipolar N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
**BSL306N-VB** power MOSFET is suitable for the following fields and modules:
1. **Low voltage switching circuit**: As a switching element in low voltage and medium current switching applications, suitable for small electronic devices and power management.
2. **Load switch**: Used for efficient load switch control, such as battery-powered devices, home appliances and portable devices, ensuring low conduction losses and efficient energy conversion.
3. **Power regulation**: Used in power regulation modules to control and regulate current, suitable for switching applications of DC-DC converters and power modules.
4. **Communication equipment**: Used for switch control in communication equipment to handle low current loads and optimize power efficiency and system performance.
**BSL306N-VB** power MOSFET is suitable for the following fields and modules:
1. **Low voltage switching circuit**: As a switching element in low voltage and medium current switching applications, suitable for small electronic devices and power management.
2. **Load switch**: Used for efficient load switch control, such as battery-powered devices, home appliances and portable devices, ensuring low conduction losses and efficient energy conversion.
3. **Power regulation**: Used in power regulation modules to control and regulate current, suitable for switching applications of DC-DC converters and power modules.
4. **Communication equipment**: Used for switch control in communication equipment to handle low current loads and optimize power efficiency and system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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