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BSL215P-VB Product details
Back to previous pageProduct introduction：
**Product Introduction: **
BSL215P-VB is a dual-channel P+P-Channel MOSFET, packaged in SOT23-6, designed for low-voltage switching applications. The VDS (maximum drain-source voltage) of this MOSFET is -20V, the maximum gate-source voltage VGS is ±12V, and the drain current ID reaches -4A. Its on-resistance RDS(ON) is 100mΩ (at VGS=2.5V) and 75mΩ (at VGS=4.5V). It uses trench process technology and is suitable for low-voltage, high-current dual-channel switching circuits.
BSL215P-VB is a dual-channel P+P-Channel MOSFET, packaged in SOT23-6, designed for low-voltage switching applications. The VDS (maximum drain-source voltage) of this MOSFET is -20V, the maximum gate-source voltage VGS is ±12V, and the drain current ID reaches -4A. Its on-resistance RDS(ON) is 100mΩ (at VGS=2.5V) and 75mΩ (at VGS=4.5V). It uses trench process technology and is suitable for low-voltage, high-current dual-channel switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
**Detailed parameter description: **
- **Package**: SOT23-6
- **Type**: Dual-channel P+P-Channel MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 2.5V; 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench process
- **Package**: SOT23-6
- **Type**: Dual-channel P+P-Channel MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 2.5V; 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench process
Domain and module applications：
*Application areas and module examples: **
1. **Power management**: In low-voltage power management systems, the BSL215P-VB can be used as an efficient switch to achieve a low-resistance current path, suitable for power switching and protection circuits.
2. **Load switch**: In small battery-powered devices and portable electronics, this MOSFET can be used for load switching, capable of handling high current loads and reducing power consumption.
3. **Signal switching**: In signal processing and analog circuits, the dual-channel nature of the BSL215P-VB makes it suitable for use as a dual-path signal switch or alternating switch, supporting low-voltage, high-current applications.
1. **Power management**: In low-voltage power management systems, the BSL215P-VB can be used as an efficient switch to achieve a low-resistance current path, suitable for power switching and protection circuits.
2. **Load switch**: In small battery-powered devices and portable electronics, this MOSFET can be used for load switching, capable of handling high current loads and reducing power consumption.
3. **Signal switching**: In signal processing and analog circuits, the dual-channel nature of the BSL215P-VB makes it suitable for use as a dual-path signal switch or alternating switch, supporting low-voltage, high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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