中文
English
BSL214N-VB Product details
Back to previous pageProduct introduction：
Product Introduction
BSL214N-VB is a dual N-Channel MOSFET in SOT23-6 package. It has low on-resistance and wide threshold voltage range, suitable for applications requiring dual MOSFET configuration, such as power management and switching circuits.
BSL214N-VB is a dual N-Channel MOSFET in SOT23-6 package. It has low on-resistance and wide threshold voltage range, suitable for applications requiring dual MOSFET configuration, such as power management and switching circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Model**: BSL214N-VB
- **Package**: SOT23-6
- **Type**: Dual N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28 mΩ @ VGS = 2.5V
- 22 mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 6A
- **Technology**: Trench type
- **Model**: BSL214N-VB
- **Package**: SOT23-6
- **Type**: Dual N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28 mΩ @ VGS = 2.5V
- 22 mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 6A
- **Technology**: Trench type
Domain and module applications：
Applicable fields and modules
BSL214N-VB is suitable for:
1. **Power management**: Dual MOSFET design is suitable for power switches and power management modules, providing efficient current control.
2. **Switching circuit**: Suitable for high-frequency switching circuits and signal switches, capable of handling medium currents.
3. **Drive circuit**: In drive circuits requiring dual MOSFETs, it can support higher current loads and low power consumption applications.
BSL214N-VB is suitable for:
1. **Power management**: Dual MOSFET design is suitable for power switches and power management modules, providing efficient current control.
2. **Switching circuit**: Suitable for high-frequency switching circuits and signal switches, capable of handling medium currents.
3. **Drive circuit**: In drive circuits requiring dual MOSFETs, it can support higher current loads and low power consumption applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
