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BSL207N-VB Product details
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Product Introduction
**BSL207N-VB** is a high-performance dual N-channel MOSFET manufactured using Trench technology and packaged in SOT23-6. This MOSFET is designed for low-voltage applications, with a drain-source voltage (VDS) of 20V and a maximum gate-source voltage (VGS) of 12V. Its low on-resistance and wide threshold voltage range enable it to perform well in a variety of low-voltage, high-switching frequency circuits, providing efficient switching performance and current control capabilities.
**BSL207N-VB** is a high-performance dual N-channel MOSFET manufactured using Trench technology and packaged in SOT23-6. This MOSFET is designed for low-voltage applications, with a drain-source voltage (VDS) of 20V and a maximum gate-source voltage (VGS) of 12V. Its low on-resistance and wide threshold voltage range enable it to perform well in a variety of low-voltage, high-switching frequency circuits, providing efficient switching performance and current control capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Parameter description
- **Model**: BSL207N-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON)）**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Model**: BSL207N-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON)）**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
**BSL207N-VB** is mainly suitable for the following fields and modules:
1. **Low voltage power management**: Used in 20V power management circuits, suitable for DC-DC converters and power switches, providing high efficiency and low power loss switching control.
2. **Switching circuit**: In low voltage switching circuits, such as power switches and load switches, it provides stable switching performance and low on-resistance, suitable for high frequency switching applications.
3. **Signal processing**: Used in signal processing and amplification circuits, it can provide reliable switching and control functions, suitable for low power electronic devices.
4. **Portable electronic devices**: Suitable for portable electronic devices and small circuit boards, optimizing space utilization and current management, and improving the overall performance and efficiency of the device.
The low on-resistance and high current handling capability of this MOSFET make it excellent in a variety of low power and portable applications.
**BSL207N-VB** is mainly suitable for the following fields and modules:
1. **Low voltage power management**: Used in 20V power management circuits, suitable for DC-DC converters and power switches, providing high efficiency and low power loss switching control.
2. **Switching circuit**: In low voltage switching circuits, such as power switches and load switches, it provides stable switching performance and low on-resistance, suitable for high frequency switching applications.
3. **Signal processing**: Used in signal processing and amplification circuits, it can provide reliable switching and control functions, suitable for low power electronic devices.
4. **Portable electronic devices**: Suitable for portable electronic devices and small circuit boards, optimizing space utilization and current management, and improving the overall performance and efficiency of the device.
The low on-resistance and high current handling capability of this MOSFET make it excellent in a variety of low power and portable applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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