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BSH301-VB Product details

Product introduction:

Product Introduction

BSH301-VB is a high-performance common-source N-channel MOSFET in TSSOP8 package. The MOSFET supports 20V drain-source withstand voltage and 20V gate-source withstand voltage, with a threshold voltage of 0.5~1.5V. It adopts Trench technology and has low on-resistance, suitable for various switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A 32(mΩ) 22(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Common Drain-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Common Drain-N+N
Parameter description

- **Model**: BSH301-VB
- **Package**: TSSOP8
- **Configuration**: Common source N+N channel
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- Under 2.5V gate drive: 32mΩ
- Under 4.5V gate drive: 22mΩ
- **Drain current (ID)**: 6.6A
- **Technology**: Trench technology

Domain and module applications:

Applications

BSH301-VB is suitable for the following areas and modules:

1. **Power Switch**: Due to its low on-resistance and high current carrying capacity, it is suitable for use in high-efficiency power switches and power management systems.
2. **Switching Power Supply**: Used in switching power supply designs as an efficient switching element to ensure low power losses and high efficiency.
3. **Electric Vehicle**: Used in battery management systems and motor drive circuits in electric vehicles to provide stable switching control.
4. **Power Amplifier**: In power amplifier circuits, it acts as a switch or driver element to improve the overall performance and efficiency of the system.

The low on-resistance and good current handling capability of this MOSFET make it an outstanding performer in applications that require efficient and stable switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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