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BSC200P03LS G-VB Product details

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Product introduction：

BSC200P03LS G-VB MOSFET Product Introduction

The BSC200P03LS G-VB is a high-performance single P-channel MOSFET packaged in a DFN8 (5x6) package. This MOSFET is designed for applications that require high current and high efficiency, providing excellent switching performance and reliability. Its maximum drain-source voltage (VDS) is -30V and the gate-source voltage (VGS) tolerance is ±20V, which is suitable for various power management and switching applications. The threshold voltage (Vth) of the BSC200P03LS G-VB is -2.5V, ensuring reliable turn-on at lower gate voltages. Its on-resistance (RDS(ON)) is 12mΩ at VGS = 4.5V and 7.8mΩ at VGS = 10V, providing efficient power transmission and low power consumption. The continuous drain current (ID) of this MOSFET can reach -60A, suitable for handling large negative current loads. The BSC200P03LS G-VB uses advanced trench technology to optimize its switching performance and overall energy efficiency.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -2.5V -60A 12(mΩ) 7.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P
BSC200P03LS G-VB MOSFET Detailed parameter description

- **Package type:** DFN8(5x6)
- **Configuration:** Single P-channel
- **Maximum drain-source voltage (VDS):** -30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2.5V
- **On-resistance (RDS(ON)):**
- 12mΩ at VGS = 4.5V
- 7.8mΩ at VGS = 10V
- **Continuous drain current (ID):** -60A
- **Technology:** Trench technology

Domain and module applications：

Applications of BSC200P03LS G-VB MOSFET

The high current handling capability and low on-resistance of BSC200P03LS G-VB MOSFET enable it to have excellent application performance in many fields. For example, in power management systems, this MOSFET can be used as an efficient power switch and power regulation module to handle negative current loads and optimize energy efficiency. In the field of electric vehicles, it is suitable for use as a switching element in motor control systems and battery management modules to provide a stable and efficient current supply. In industrial applications, BSC200P03LS G-VB can be used in high-power motor drives and power conversion equipment to provide reliable switching functions and reduce energy losses. In addition, this MOSFET is also suitable for high-efficiency LED drivers and other high-power electronic devices to improve overall performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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