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BSC152N10NSF G-VB Product details

Product introduction:

1. Product Introduction

BSC152N10NSF G-VB is a high-performance single N-channel MOSFET in DFN8 (5x6mm) package, designed for high voltage and high current applications. The device adopts advanced trench technology and has excellent electrical performance. BSC152N10NSF G-VB can withstand up to 65A drain current at a maximum drain-source voltage of 100V. Its low on-resistance (9mΩ @ VGS=10V) minimizes energy loss during switching, making it suitable for electronic systems requiring high power density and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 2.5V 65A 12.36(mΩ) 9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 2.5V 65A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 2.5V 65A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
II. Detailed parameter description

| Parameter| Value|
|---------------------|-------------------|
| **Device model** | BSC152N10NSF G-VB |
| **Package type** | DFN8 (5x6mm) |
| **Configuration** | Single-N-Channel|
| **Maximum drain-source voltage (VDS)** | 100V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 12.36mΩ @ VGS=4.5V|
| **On-resistance (RDS(ON))** | 9mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 65A |
| **Technology** | Trench |

Domain and module applications:

## III. Applications and Modules

#### 1. Power Management
BSC152N10NSF G-VB excels in power management systems, especially in high-efficiency DC-DC converters and AC-DC power adapters. Its low on-resistance and high current capability enable it to effectively reduce power losses and improve the overall efficiency of the power system, making it suitable for power modules that require high power density and high efficiency.

#### 2. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)
In the power management systems of EVs and HEVs, the BSC152N10NSF G-VB is able to handle battery management and motor drive applications. Its high current carrying capacity and low on-resistance help optimize power transmission, improve the energy efficiency and performance of the overall system, and ensure stable operation of EVs under high loads.

#### 3. Industrial Control
In industrial automation systems, the BSC152N10NSF G-VB is suitable for motor control and high-power switching applications. Its high current handling capability and low on-resistance can improve the efficiency and reliability of industrial equipment, and is particularly suitable for industrial environments with frequent switching and high loads.

#### 4. High-efficiency LED driver
In high-efficiency LED lighting systems, the BSC152N10NSF G-VB can be used as a switching element in LED driver circuits. Due to its excellent on-performance and high current capability, it can reduce energy loss, improve the overall efficiency of the LED driver circuit, and support a longer LED life.

These application scenarios demonstrate the wide applicability of the BSC152N10NSF G-VB in high voltage and high current environments, making it an important switching element in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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