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BSC123N08NS3 G-VB Product details

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Product introduction：

BSC123N08NS3 G-VB MOSFET Product Introduction

The BSC123N08NS3 G-VB is a high-performance single N-channel MOSFET packaged in a DFN8(5x6) housing. This MOSFET is designed for applications that require high current and high efficiency, providing excellent performance and reliability. Its maximum drain-source voltage (VDS) is 80V and its gate-source voltage (VGS) tolerance is ±20V, which is suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the BSC123N08NS3 G-VB is 3V, ensuring reliable startup at lower gate voltages. Its on-resistance (RDS(ON)) is 7mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, providing efficient power transfer and low power consumption. The continuous drain current (ID) of this MOSFET can reach 60A, suitable for handling larger current loads. The BSC123N08NS3 G-VB uses advanced trench technology to optimize its switching performance and energy efficiency.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 80V 3V 60A 7(mΩ) 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
DFN8(5X6) Single-N 80V 3V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
DFN8(5X6) Single-N 80V 3V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
BSC123N08NS3 G-VB MOSFET Detailed parameter description

- **Package type:** DFN8(5x6)
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 80V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):**
- 7mΩ at VGS = 4.5V
- 5mΩ at VGS = 10V
- **Continuous drain current (ID):** 60A
- **Technology:** Trench technology

Domain and module applications：

Applications of BSC123N08NS3 G-VB MOSFET

The high current handling capability and low on-resistance of BSC123N08NS3 G-VB MOSFET enable it to excel in many fields. For example, in power management systems, this MOSFET can be used in high-efficiency power switches and power regulation modules to handle high current loads while maintaining high efficiency. In the field of electric vehicles, it is suitable for use in motor control systems and battery management modules to ensure stable and efficient current supply. In industrial applications, BSC123N08NS3 G-VB can be used in high-power motor drives and power conversion equipment to provide reliable switching functions and reduce energy losses. In addition, this MOSFET is also suitable for high-efficiency LED drivers and other high-power electronic devices to improve overall performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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