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BSC110N06NS3 G-VB Product details

Product introduction:

1. Product Introduction

BSC110N06NS3 G-VB is a high-performance single N-channel MOSFET in DFN8 (5x6mm) package, designed for medium voltage and high current applications. The device adopts advanced trench technology and has excellent electrical performance and stability. Under the condition of maximum drain-source voltage of 60V, BSC110N06NS3 G-VB can withstand up to 50A of drain current and provide a low on-resistance of 10mΩ (at VGS=10V). This design makes it particularly suitable for electronic systems requiring high efficiency and high power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 60V 2.5V 50A 13(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 60V 2.5V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 60V 2.5V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
II. Detailed parameter description

| Parameter| Value|
|---------------------|-------------------|
| **Device model** | BSC110N06NS3 G-VB |
| **Package type** | DFN8 (5x6mm) |
| **Configuration** | Single-N-Channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 13mΩ @ VGS=4.5V |
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 50A |
| **Technology** | Trench |

Domain and module applications:

### III. Applications and Modules

#### 1. Power Management
BSC110N06NS3 G-VB excels in power management systems, especially for DC-DC converters and AC-DC power adapters. Its low on-resistance and high current capability enable it to effectively reduce power losses and improve the overall efficiency of the power system, making it suitable for power modules that require higher power density.

#### 2. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)
In the power management systems of EVs and HEVs, the BSC110N06NS3 G-VB is able to handle battery management and motor drive applications. Its high current carrying capacity and relatively low on-resistance help optimize power transmission and improve the energy efficiency and performance of the overall system.

#### 3. Industrial Control
In the field of industrial automation, the BSC110N06NS3 G-VB is suitable for motor control and high-power switching applications. Its high current handling capability and low on-resistance can improve the efficiency and reliability of industrial equipment and is suitable for environments with frequent switching and medium to high loads.

#### 4. High-efficiency LED driver
In high-efficiency LED lighting systems, the BSC110N06NS3 G-VB can be used as a switching element in LED driver circuits. Its excellent on-performance and high current capability can improve the efficiency of LED driver circuits, reduce energy loss, and support a longer LED life.

These application examples demonstrate the wide applicability of the BSC110N06NS3 G-VB in medium voltage and high current environments, making it an important switching element in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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