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BSC100N03MS G-VB Product details

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Product introduction：

BSC100N03MS G-VB MOSFET Product Introduction

The BSC100N03MS G-VB is a high-performance single N-channel MOSFET packaged in a DFN8(5x6) case. This MOSFET is designed for high current and high efficiency applications. With a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V, it is suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the BSC100N03MS G-VB is 1.7V, ensuring reliable startup at lower gate voltages. Its on-resistance (RDS(ON)) is 9mΩ at VGS = 4.5V and 7mΩ at VGS = 10V, providing good power efficiency and low power consumption. With a continuous drain current (ID) of up to 80A, this MOSFET is suitable for handling high current loads. The BSC100N03MS G-VB uses advanced trench technology to optimize its switching performance and overall energy efficiency.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 9(mΩ) 7(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
BSC100N03MS G-VB MOSFET Detailed parameter description

- **Package type:** DFN8(5x6)
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 9mΩ at VGS = 4.5V
- 7mΩ at VGS = 10V
- **Continuous drain current (ID):** 80A
- **Technology:** Trench technology

Domain and module applications：

Application areas of BSC100N03MS G-VB MOSFET

The high current handling capability and low on-resistance of BSC100N03MS G-VB MOSFET enable it to excel in multiple fields. For example, in power management systems, this MOSFET can be used in efficient power switches and power regulation modules to handle high current loads and improve energy efficiency. In the field of electric vehicles, it is suitable for use as a switching element in motor control systems and battery management modules to ensure efficient and stable current supply. In industrial applications, BSC100N03MS G-VB can be applied to high-power motor drives and power conversion equipment to provide reliable switching functions and reduce energy losses. In addition, this MOSFET is also suitable for high-efficiency LED drivers and other high-power electronic devices to improve overall performance and power efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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