Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
9(mΩ) |
7(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: BSC094N03S G-VB
- **Package**: DFN8(5X6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (@VGS=4.5V)
- 7mΩ (@VGS=10V)
- **Drain current (ID)**: 80A
- **Technology**: Trench (trench technology)
Domain and module applications:
3. Application fields and modules
BSC094N03S G-VB MOSFET excels in multiple fields and modules due to its low on-resistance and high current capability. Here are some examples of specific applications:
1. **Power switch**:
In power switch applications, BSC094N03S G-VB MOSFET is able to provide low on-resistance and high current handling capability, suitable for power switching circuits and DC-DC converters. Its low RDS(ON) characteristics help reduce power losses and improve the efficiency and stability of the power supply.
2. **Electric vehicle battery management**:
In electric vehicle battery management systems, this MOSFET is able to handle high current loads, provide stable current control and battery protection functions. Its high current capability and low on-resistance ensure efficient and safe operation of the battery system.
3. **High power LED driver**:
In high power LED lighting systems, BSC094N03S G-VB is used for LED driving and switch control. Its low on-resistance helps reduce power consumption, improves LED brightness and life, and is suitable for high-efficiency LED lighting solutions.
4. **Industrial Motor Control**:
In industrial motor drive systems, this MOSFET can be used for motor start, run and stop control. Its high current handling capability and low RDS(ON) ensure the efficiency and reliability of the motor drive system, suitable for a variety of industrial motor control applications.
5. **Consumer Electronics Devices**:
BSC094N03S G-VB is also suitable for power management modules in consumer electronic devices, such as smartphones and laptops. It can provide efficient power switching and current control, improving the performance and battery life of the device.
These application examples show the wide applicability and importance of the BSC094N03S G-VB MOSFET in high current and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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