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BSC094N03S G-VB Product details

Product introduction:

1. Product Introduction

BSC094N03S G-VB is a high-performance single N-channel MOSFET in DFN8 (5X6) package, designed for applications requiring low on-resistance and high current handling capability. It uses Trench technology, has efficient switching performance and stable current control, and is widely used in power management, load switching and power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 9(mΩ) 7(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. Detailed parameter description

- **Model**: BSC094N03S G-VB
- **Package**: DFN8(5X6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (@VGS=4.5V)
- 7mΩ (@VGS=10V)
- **Drain current (ID)**: 80A
- **Technology**: Trench (trench technology)

Domain and module applications:

3. Application fields and modules

BSC094N03S G-VB MOSFET excels in multiple fields and modules due to its low on-resistance and high current capability. Here are some examples of specific applications:

1. **Power switch**:
In power switch applications, BSC094N03S G-VB MOSFET is able to provide low on-resistance and high current handling capability, suitable for power switching circuits and DC-DC converters. Its low RDS(ON) characteristics help reduce power losses and improve the efficiency and stability of the power supply.

2. **Electric vehicle battery management**:
In electric vehicle battery management systems, this MOSFET is able to handle high current loads, provide stable current control and battery protection functions. Its high current capability and low on-resistance ensure efficient and safe operation of the battery system.

3. **High power LED driver**:
In high power LED lighting systems, BSC094N03S G-VB is used for LED driving and switch control. Its low on-resistance helps reduce power consumption, improves LED brightness and life, and is suitable for high-efficiency LED lighting solutions.

4. **Industrial Motor Control**:
In industrial motor drive systems, this MOSFET can be used for motor start, run and stop control. Its high current handling capability and low RDS(ON) ensure the efficiency and reliability of the motor drive system, suitable for a variety of industrial motor control applications.

5. **Consumer Electronics Devices**:
BSC094N03S G-VB is also suitable for power management modules in consumer electronic devices, such as smartphones and laptops. It can provide efficient power switching and current control, improving the performance and battery life of the device.

These application examples show the wide applicability and importance of the BSC094N03S G-VB MOSFET in high current and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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