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BSC085N025S G-VB Product details

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Product introduction：

BSC085N025S G-VB MOSFET Product Introduction

The BSC085N025S G-VB is a high-performance single N-channel MOSFET packaged in a DFN8(5x6) housing. This MOSFET is designed for applications that require high current handling and high efficiency. With a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V, it is suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the BSC085N025S G-VB is 1.7V, ensuring reliable startup at low gate voltages. Its on-resistance (RDS(ON)) is 9mΩ at VGS = 4.5V and 7mΩ at VGS = 10V, providing excellent power efficiency and low power consumption. With a continuous drain current (ID) of up to 80A, this MOSFET is suitable for handling larger current loads. The BSC085N025S G-VB uses advanced trench technology to optimize its switching performance and overall energy efficiency.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 9(mΩ) 7(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
BSC085N025S G-VB MOSFET Detailed parameter description

- **Package type:** DFN8(5x6)
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 9mΩ at VGS = 4.5V
- 7mΩ at VGS = 10V
- **Continuous drain current (ID):** 80A
- **Technology:** Trench technology

Domain and module applications：

Applications of BSC085N025S G-VB MOSFET

The high current handling capability and low on-resistance of BSC085N025S G-VB MOSFET enable it to have excellent application performance in many fields. For example, in power management systems, this MOSFET can be used in high-efficiency power switches and power regulation modules to handle high current loads and reduce power consumption. In the field of electric vehicles, it is suitable for motor control systems and battery management modules to provide efficient and stable current supply. In industrial applications, BSC085N025S G-VB can be used in high-power motor drives and power conversion equipment because its low on-resistance can significantly reduce energy losses. In addition, this MOSFET is also suitable for high-efficiency LED drivers and other high-power electronic devices to improve the overall performance and energy efficiency of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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