Product introduction：
1. Product Introduction
**Model: BSC070N10NS3 G-VB**
BSC070N10NS3 G-VB is a high-performance single N-channel MOSFET in DFN8 (5x6) package. Manufactured using advanced Trench technology, this MOSFET has low on-resistance and high current handling capability, making it particularly suitable for high-efficiency power management and switching applications. BSC070N10NS3 G-VB supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, and its threshold voltage (Vth) ranges from 1V to 3V, ensuring reliable turn-on at lower gate voltages. The MOSFET has an on-resistance (RDS(ON)) of 6mΩ at a gate voltage of 4.5V and 5mΩ at a gate voltage of 10V, and can provide a continuous drain current (ID) of up to 100A, making it an excellent performer in high-current and high-efficiency applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1~3V |
100A |
|
6(mΩ) |
5(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1~3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1~3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: BSC070N10NS3 G-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON)）**:
- @VGS = 4.5V: 6mΩ
- @VGS = 10V: 5mΩ
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**Power switch**: The BSC070N10NS3 G-VB is ideal for high-efficiency power switch applications due to its high current handling capability and low on-resistance. Its low RDS(ON) characteristics enable it to significantly reduce power consumption and improve overall system efficiency in DC-DC converters, high-performance power supply units, and switching power supplies.
**Electric vehicles**: In the motor drive system and battery management system of electric vehicles, the high current capability and high voltage tolerance of the BSC070N10NS3 G-VB enable it to handle the high current and high voltage requirements in electric vehicles. Its low on-resistance helps reduce energy loss and improve the performance and endurance of electric vehicles.
**Industrial power**: This MOSFET is suitable for high-power industrial power systems such as inverters and industrial power supply units. The BSC070N10NS3 G-VB can handle high current loads, ensure efficient operation and long-term stability of the system, and is suitable for use in various industrial power applications.
**LED Driver**: In high-power LED lighting applications, the low on-resistance provided by the BSC070N10NS3 G-VB can reduce power consumption and heat, and improve the efficiency and life of the LED. This makes it an ideal choice for high-brightness LED lighting systems and LED driver modules.
**High-voltage Power Management**: In power management systems that need to handle high voltages and high currents, such as high-voltage DC-DC converters and power inverters, the BSC070N10NS3 G-VB can provide a stable current supply and maintain high efficiency and reliability under high voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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