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BSC057N03LS G-VB Product details

Product introduction:

Product Introduction

BSC057N03LS G-VB is a high-performance single-tube N-channel MOSFET in DFN8 (5x6) package. This MOSFET is designed to handle high current and low on-resistance applications, with a drain-source withstand voltage of 30V, a gate-source withstand voltage of 20V and a threshold voltage of 1.7V. Using Trench technology, it has extremely low on-resistance and is suitable for efficient power management and switch control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 5(mΩ) 3(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Parameter description

- **Model**: BSC057N03LS G-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single tube N-channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- Under 4.5V gate drive: 5mΩ
- Under 10V gate drive: 3mΩ
- **Drain current (ID)**: 120A
- **Technology**: Trench technology

Domain and module applications:

Applications

BSC057N03LS G-VB is suitable for the following fields and modules:

1. **High-efficiency power management**: Due to its extremely low on-resistance and high current capability, it is very suitable for power management systems to provide efficient power conversion and distribution.
2. **DC-DC converter**: As a low-side switch in the DC-DC converter, it reduces power loss and improves conversion efficiency.
3. **Electric vehicles**: Used in battery management and motor drive systems of electric vehicles, providing efficient switch control and current handling capabilities.
4. **Power switching applications**: Suitable for high-power switching applications that require high current carrying and low on-resistance, such as high-power amplifiers and switching power supplies.

The high current capability and low on-resistance of this MOSFET make it excel in high-efficiency and high-reliability application environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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