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BSC042NE7NS3 G-VB Product details

Product introduction:

Product Introduction

BSC042NE7NS3 G-VB is a high performance single tube N-channel MOSFET in DFN8 (5x6) package. The MOSFET provides 80V drain-source withstand voltage, 20V gate-source withstand voltage, and has a threshold voltage of 3V. Manufactured using Trench technology, it has a low on-resistance and is suitable for medium and high current switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 80V 3V 60A 7(mΩ) 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 80V 3V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 80V 3V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Parameter description

- **Model**: BSC042NE7NS3 G-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single tube N-channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- Under 4.5V gate drive: 7mΩ
- Under 10V gate drive: 5mΩ
- **Drain current (ID)**: 60A
- **Technology**: Trench technology

Domain and module applications:

Applications

BSC042NE7NS3 G-VB is suitable for the following areas and modules:

1. **Power Management**: Suitable for efficient power management systems that can handle high voltages and medium to high currents to reduce power losses.
2. **DC-DC Converter**: Used as a switching element in a DC-DC converter to support high current and high efficiency conversion.
3. **Electric Vehicle**: Suitable for battery management systems and motor drive systems in electric vehicles, providing efficient switching performance.
4. **Power Amplifier**: Used in power amplifiers and high-power switching applications that require high voltage and low on-resistance.

The high drain-source withstand voltage and low on-resistance characteristics of this MOSFET make it excel in high voltage applications that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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