Featured Model

Your present location > Home page > Featured Model

BSC022N03S G-VB Product details

Product introduction:

Product Introduction

**BSC022N03S G-VB** is a single N-channel MOSFET manufactured using Trench technology and designed for high-performance applications. It is packaged in DFN8 (5x6) and has high current carrying capability and low on-resistance, making it suitable for power management and high switching frequency circuits. This MOSFET has a drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of 20V, making it perform well in a variety of applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 2.5(mΩ) 1.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Parameter description

- **Model**: BSC022N03S G-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 1.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 160A
- **Technology**: Trench

Domain and module applications:

Application fields and modules

**BSC022N03S G-VB** is mainly suitable for the following fields and modules:

1. **Power management**: Used in high-efficiency power converters and DC-DC converters, its low on-resistance helps reduce power loss and improve system efficiency.
2. **Switching circuit**: Used in high-switching frequency switching circuits such as inverters and power amplifiers, providing stable switching performance and low conduction loss.
3. **Motor drive**: Used in motor drive systems, it can handle high currents to ensure the stability and efficiency of motor operation.
4. **Automotive electronics**: Suitable for automotive electronic systems such as electric power steering systems, providing reliable current control and high-efficiency transmission.

These application scenarios take advantage of the high current carrying capacity and low on-resistance of this MOSFET to improve the overall performance and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat