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BRI1N60-VB Product details
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Product Introduction
**BRI1N60-VB** is a unipolar N-channel power MOSFET in a TO251 package for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 650V and supports a maximum gate-source voltage (VGS) of ±30V. It has a threshold voltage (Vth) of 3.5V, a low on-resistance of 4300mΩ (VGS=10V) and a maximum leakage current of 2A. The MOSFET uses planar technology and is suitable for high voltage switching power supplies and power control applications.
**BRI1N60-VB** is a unipolar N-channel power MOSFET in a TO251 package for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 650V and supports a maximum gate-source voltage (VGS) of ±30V. It has a threshold voltage (Vth) of 3.5V, a low on-resistance of 4300mΩ (VGS=10V) and a maximum leakage current of 2A. The MOSFET uses planar technology and is suitable for high voltage switching power supplies and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: BRI1N60-VB
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology
- **Model**: BRI1N60-VB
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology
Domain and module applications：
Applicable fields and modules
**BRI1N60-VB** power MOSFET is mainly suitable for the following fields and modules:
1. **Power management**: used as a switching element in high-voltage switching power supplies to ensure efficient energy conversion and reduce power losses.
2. **Power control**: used as a switching element in various motor drive and power regulation applications to achieve efficient control and stability.
3. **Power inverter**: used for high-voltage DC to AC conversion in photovoltaic power generation systems and UPS (uninterruptible power supply) systems.
4. **Battery management system**: used for battery protection and management, especially in applications requiring high voltage tolerance, to ensure system reliability and safety.
**BRI1N60-VB** power MOSFET is mainly suitable for the following fields and modules:
1. **Power management**: used as a switching element in high-voltage switching power supplies to ensure efficient energy conversion and reduce power losses.
2. **Power control**: used as a switching element in various motor drive and power regulation applications to achieve efficient control and stability.
3. **Power inverter**: used for high-voltage DC to AC conversion in photovoltaic power generation systems and UPS (uninterruptible power supply) systems.
4. **Battery management system**: used for battery protection and management, especially in applications requiring high voltage tolerance, to ensure system reliability and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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