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BRF6N60-VB Product details
Back to previous pageProduct introduction：
**Product Introduction: **
BRF6N60-VB is a high-voltage N-Channel MOSFET packaged in TO220F, suitable for high-voltage, high-current switching applications. Its VDS (maximum drain-source voltage) is 650V, the maximum gate-source voltage VGS is ±30V, and the drain current ID is 7A. Its RDS(ON) is 1100mΩ (at VGS=10V), and it uses planar process technology, which is suitable for various high-voltage power switching circuits.
BRF6N60-VB is a high-voltage N-Channel MOSFET packaged in TO220F, suitable for high-voltage, high-current switching applications. Its VDS (maximum drain-source voltage) is 650V, the maximum gate-source voltage VGS is ±30V, and the drain current ID is 7A. Its RDS(ON) is 1100mΩ (at VGS=10V), and it uses planar process technology, which is suitable for various high-voltage power switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
**Detailed parameter description: **
- **Package**: TO220F
- **Type**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Planar process
- **Package**: TO220F
- **Type**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Planar process
Domain and module applications：
**Application fields and module examples:**
1. **Power management module**: In high-voltage power switches and inverters, the BRF6N60-VB can provide stable switching performance and ensure the reliability of the power system due to its high voltage resistance and high current capability.
2. **Motor drive circuit**: In motor control and drive circuits, this MOSFET can effectively handle high voltage and high current loads and improve the efficiency of the drive system.
3. **Lighting control system**: In the control system of LED lighting or high-power lamps, this MOSFET can be used to adjust the switching state of the light source and support high-power operation.
1. **Power management module**: In high-voltage power switches and inverters, the BRF6N60-VB can provide stable switching performance and ensure the reliability of the power system due to its high voltage resistance and high current capability.
2. **Motor drive circuit**: In motor control and drive circuits, this MOSFET can effectively handle high voltage and high current loads and improve the efficiency of the drive system.
3. **Lighting control system**: In the control system of LED lighting or high-power lamps, this MOSFET can be used to adjust the switching state of the light source and support high-power operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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