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B80NF55-06-VB Product details
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Product Introduction
B80NF55-06-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high switching speed applications. This MOSFET uses advanced Trench technology, has low on-resistance and high current handling capability, suitable for a variety of power conversion and switching applications. Its maximum drain-source voltage is 60V and it can carry up to 150A of drain current, making it an excellent performer in systems that require high performance and reliability.
B80NF55-06-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high switching speed applications. This MOSFET uses advanced Trench technology, has low on-resistance and high current handling capability, suitable for a variety of power conversion and switching applications. Its maximum drain-source voltage is 60V and it can carry up to 150A of drain current, making it an excellent performer in systems that require high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B80NF55-06-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: B80NF55-06-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management Systems**: The B80NF55-06-VB MOSFET provides excellent current handling capability and low on-resistance in efficient power management systems. It is suitable for use in switching power supplies and DC-DC converters, reducing power losses and improving system efficiency.
2. **Electric Vehicle (EV) Drive Systems**: In the drive systems of electric vehicles, this MOSFET can withstand high currents and operate stably, suitable for motor drive and battery management applications. Its high current capability and low on-resistance ensure system reliability and high efficiency.
3. **Solar Inverters**: The B80NF55-06-VB MOSFET is ideal for use in solar inverters, helping to efficiently convert DC to AC. Its low on-resistance helps improve the overall efficiency and stability of the inverter.
4. **Industrial Motor Drives**: In industrial motor drive applications, the B80NF55-06-VB can handle high current loads and provide stable switching performance. Its excellent conduction performance and high current carrying capacity make it an excellent performer in motor control systems.
5. **High Power LED Driver**: For high power LED drivers, the B80NF55-06-VB MOSFET can effectively control large currents, increasing the brightness and life of the LED. Its low on-resistance reduces energy loss and improves overall drive efficiency.
With its strong current handling capability and low on-resistance, the B80NF55-06-VB has demonstrated excellent performance in a variety of high power applications and is an ideal choice for high performance and high reliability systems.
1. **Power Management Systems**: The B80NF55-06-VB MOSFET provides excellent current handling capability and low on-resistance in efficient power management systems. It is suitable for use in switching power supplies and DC-DC converters, reducing power losses and improving system efficiency.
2. **Electric Vehicle (EV) Drive Systems**: In the drive systems of electric vehicles, this MOSFET can withstand high currents and operate stably, suitable for motor drive and battery management applications. Its high current capability and low on-resistance ensure system reliability and high efficiency.
3. **Solar Inverters**: The B80NF55-06-VB MOSFET is ideal for use in solar inverters, helping to efficiently convert DC to AC. Its low on-resistance helps improve the overall efficiency and stability of the inverter.
4. **Industrial Motor Drives**: In industrial motor drive applications, the B80NF55-06-VB can handle high current loads and provide stable switching performance. Its excellent conduction performance and high current carrying capacity make it an excellent performer in motor control systems.
5. **High Power LED Driver**: For high power LED drivers, the B80NF55-06-VB MOSFET can effectively control large currents, increasing the brightness and life of the LED. Its low on-resistance reduces energy loss and improves overall drive efficiency.
With its strong current handling capability and low on-resistance, the B80NF55-06-VB has demonstrated excellent performance in a variety of high power applications and is an ideal choice for high performance and high reliability systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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