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B60NH02L-VB Product details
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Product Introduction
**B60NH02L-VB** is a high-performance single-channel N-channel MOSFET in TO-263 package. This MOSFET is manufactured using advanced Trench technology and has extremely low on-resistance and excellent current carrying capacity, making it suitable for applications requiring high efficiency and high power density. Its maximum drain-source voltage (VDS) is 30V, which allows it to operate stably in a lower voltage environment. At the same time, its gate-source voltage (VGS) allows a maximum of ±20V, ensuring reliability under high voltage conditions. The on-resistance (RDS(ON)) of the B60NH02L-VB is 8mΩ at a VGS of 4.5V and 6mΩ at a VGS of 10V, with extremely low on-resistance, further improving power efficiency. The rated drain current (ID) of this MOSFET is up to 70A, which is suitable for applications with high current loads.
**B60NH02L-VB** is a high-performance single-channel N-channel MOSFET in TO-263 package. This MOSFET is manufactured using advanced Trench technology and has extremely low on-resistance and excellent current carrying capacity, making it suitable for applications requiring high efficiency and high power density. Its maximum drain-source voltage (VDS) is 30V, which allows it to operate stably in a lower voltage environment. At the same time, its gate-source voltage (VGS) allows a maximum of ±20V, ensuring reliability under high voltage conditions. The on-resistance (RDS(ON)) of the B60NH02L-VB is 8mΩ at a VGS of 4.5V and 6mΩ at a VGS of 10V, with extremely low on-resistance, further improving power efficiency. The rated drain current (ID) of this MOSFET is up to 70A, which is suitable for applications with high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 8(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B60NH02L-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
- **Model**: B60NH02L-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**:
B60NH02L-VB is suitable for power management modules, such as power switches and overcurrent protection circuits. Its low on-resistance can significantly reduce power loss and improve power efficiency, thereby providing better performance and stability in power modules.
2. **Motor drive**:
In motor drive applications, the high current handling capability and low RDS(ON) value of B60NH02L-VB make it very suitable for driving DC motors, stepper motors, etc. It can effectively handle large current loads and improve the working efficiency and response speed of the motor.
3. **Switching power supply (SMPS)**:
This MOSFET performs well as a switching element in switching power supplies such as switch mode power supplies and DC-DC converters. Its extremely low on-resistance can reduce switching losses and improve overall conversion efficiency, making it very suitable for efficient switching power supply designs.
4. **LED drive circuit**:
For high-power LED drive circuits, the B60NH02L-VB provides sufficient current handling capability, and the low on-resistance helps reduce heat generation, extend system life, and improve stability.
The superior performance of this MOSFET makes it excel in high-current and high-efficiency applications, especially in environments that need to handle lower voltages and high currents.
1. **Power management**:
B60NH02L-VB is suitable for power management modules, such as power switches and overcurrent protection circuits. Its low on-resistance can significantly reduce power loss and improve power efficiency, thereby providing better performance and stability in power modules.
2. **Motor drive**:
In motor drive applications, the high current handling capability and low RDS(ON) value of B60NH02L-VB make it very suitable for driving DC motors, stepper motors, etc. It can effectively handle large current loads and improve the working efficiency and response speed of the motor.
3. **Switching power supply (SMPS)**:
This MOSFET performs well as a switching element in switching power supplies such as switch mode power supplies and DC-DC converters. Its extremely low on-resistance can reduce switching losses and improve overall conversion efficiency, making it very suitable for efficient switching power supply designs.
4. **LED drive circuit**:
For high-power LED drive circuits, the B60NH02L-VB provides sufficient current handling capability, and the low on-resistance helps reduce heat generation, extend system life, and improve stability.
The superior performance of this MOSFET makes it excel in high-current and high-efficiency applications, especially in environments that need to handle lower voltages and high currents.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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