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B50NE10-VB Product details
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1. Product Introduction
**Model: B50NE10-VB**
B50NE10-VB is a high-voltage, high-current single N-channel MOSFET in a TO263 package. Manufactured using advanced Trench technology, the device features low on-resistance and high current handling capability, making it suitable for applications requiring high voltage and high current. The B50NE10-VB can withstand drain-source voltages (VDS) up to 100V and gate-source voltages (VGS) of ±20V, and its threshold voltage (Vth) is 1.8V, ensuring reliable turn-on at lower gate voltages. With an on-resistance (RDS(ON)) of 20mΩ at a gate voltage of 10V, the MOSFET is capable of delivering a continuous drain current (ID) of up to 70A, performing well in high-voltage applications.
**Model: B50NE10-VB**
B50NE10-VB is a high-voltage, high-current single N-channel MOSFET in a TO263 package. Manufactured using advanced Trench technology, the device features low on-resistance and high current handling capability, making it suitable for applications requiring high voltage and high current. The B50NE10-VB can withstand drain-source voltages (VDS) up to 100V and gate-source voltages (VGS) of ±20V, and its threshold voltage (Vth) is 1.8V, ensuring reliable turn-on at lower gate voltages. With an on-resistance (RDS(ON)) of 20mΩ at a gate voltage of 10V, the MOSFET is capable of delivering a continuous drain current (ID) of up to 70A, performing well in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: B50NE10-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @VGS = 10V: 20mΩ
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: B50NE10-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @VGS = 10V: 20mΩ
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**High-voltage power management**: The high drain-source voltage capability of the B50NE10-VB makes it very suitable for high-voltage power management systems, such as high-voltage DC-DC converters and power switches. Its low on-resistance and high current handling capability ensure high performance and stability in high-voltage environments, suitable for industrial power supplies and high-voltage electronic devices.
**Electric vehicle charging system**: In the charging system of electric vehicles, the B50NE10-VB is able to handle high voltages and large currents, ensuring stability and efficiency during the charging process. Its high current capability and low RDS(ON) characteristics are critical to ensuring battery charging efficiency and system safety.
**Power amplifier**: In applications requiring high power output, such as power amplifiers and radio frequency (RF) amplifiers, the high-voltage withstand capability and low on-resistance of the B50NE10-VB can effectively improve system performance and efficiency. This is especially important for power amplification applications in communication equipment and broadcasting equipment.
**Inverter**: In solar inverters and other power inverter equipment, the B50NE10-VB is able to operate stably under high voltage conditions, reducing power losses and improving the overall efficiency of the system. Its high current capability and low RDS(ON) characteristics make it a key component in efficient inverter design.
**High-voltage power management**: The high drain-source voltage capability of the B50NE10-VB makes it very suitable for high-voltage power management systems, such as high-voltage DC-DC converters and power switches. Its low on-resistance and high current handling capability ensure high performance and stability in high-voltage environments, suitable for industrial power supplies and high-voltage electronic devices.
**Electric vehicle charging system**: In the charging system of electric vehicles, the B50NE10-VB is able to handle high voltages and large currents, ensuring stability and efficiency during the charging process. Its high current capability and low RDS(ON) characteristics are critical to ensuring battery charging efficiency and system safety.
**Power amplifier**: In applications requiring high power output, such as power amplifiers and radio frequency (RF) amplifiers, the high-voltage withstand capability and low on-resistance of the B50NE10-VB can effectively improve system performance and efficiency. This is especially important for power amplification applications in communication equipment and broadcasting equipment.
**Inverter**: In solar inverters and other power inverter equipment, the B50NE10-VB is able to operate stably under high voltage conditions, reducing power losses and improving the overall efficiency of the system. Its high current capability and low RDS(ON) characteristics make it a key component in efficient inverter design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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