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B482L-VB Product details
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B482L-VB MOSFET Product Introduction
The B482L-VB is a high-performance single N-channel MOSFET packaged in a TO-263 housing. This MOSFET is designed for applications requiring high power handling and efficient switching. Its maximum drain-source voltage (VDS) is 80V and its gate-source voltage (VGS) tolerance is ±20V, providing a wide range of adaptability. The device has a high threshold voltage (Vth) of 3V, but still ensures reliable driving under low-voltage gate signals. The B482L-VB has a very low on-resistance (RDS(ON)), which is 10mΩ at VGS = 4.5V and 6mΩ at VGS = 10V, making it suitable for applications that require high current handling, and its continuous drain current (ID) can reach 120A. This MOSFET uses advanced trench technology to improve its performance, especially in terms of low on-resistance and high efficiency.
The B482L-VB is a high-performance single N-channel MOSFET packaged in a TO-263 housing. This MOSFET is designed for applications requiring high power handling and efficient switching. Its maximum drain-source voltage (VDS) is 80V and its gate-source voltage (VGS) tolerance is ±20V, providing a wide range of adaptability. The device has a high threshold voltage (Vth) of 3V, but still ensures reliable driving under low-voltage gate signals. The B482L-VB has a very low on-resistance (RDS(ON)), which is 10mΩ at VGS = 4.5V and 6mΩ at VGS = 10V, making it suitable for applications that require high current handling, and its continuous drain current (ID) can reach 120A. This MOSFET uses advanced trench technology to improve its performance, especially in terms of low on-resistance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 10(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
B482L-VB MOSFET Detailed parameter description
- **Package type:** TO-263
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 80V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):**
- 10mΩ at VGS = 4.5V
- 6mΩ at VGS = 10V
- **Continuous drain current (ID):** 120A
- **Technology:** Trench technology
- **Package type:** TO-263
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 80V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):**
- 10mΩ at VGS = 4.5V
- 6mΩ at VGS = 10V
- **Continuous drain current (ID):** 120A
- **Technology:** Trench technology
Domain and module applications：
Application areas of B482L-VB MOSFET
The high performance characteristics of B482L-VB MOSFET make it suitable for a variety of demanding applications. For example, in the electric vehicle industry, this MOSFET can be used as a switching element in the powertrain system, handling high currents while maintaining high efficiency. In consumer electronics, the B482L-VB is suitable for use in high-power power modules, such as high-end computer power supplies, to reduce power consumption and improve power conversion efficiency. In addition, it can also be used in motor control and power management systems for industrial equipment, because its high current handling capability and low on-resistance ensure stable operation of the system. Finally, this MOSFET is also suitable for renewable energy systems, such as solar inverters, to optimize energy utilization by improving system efficiency and reducing energy losses.
The high performance characteristics of B482L-VB MOSFET make it suitable for a variety of demanding applications. For example, in the electric vehicle industry, this MOSFET can be used as a switching element in the powertrain system, handling high currents while maintaining high efficiency. In consumer electronics, the B482L-VB is suitable for use in high-power power modules, such as high-end computer power supplies, to reduce power consumption and improve power conversion efficiency. In addition, it can also be used in motor control and power management systems for industrial equipment, because its high current handling capability and low on-resistance ensure stable operation of the system. Finally, this MOSFET is also suitable for renewable energy systems, such as solar inverters, to optimize energy utilization by improving system efficiency and reducing energy losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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