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B434-VB Product details
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1. Product Introduction
**Model: B434-VB**
B434-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for various power management and switching applications. Manufactured using advanced Trench technology, the device has low on-resistance and high current capability, and can provide efficient switching performance at low voltage. The B434-VB can withstand drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V, while providing high performance, ensuring safe and stable operation. Its threshold voltage (Vth) is 1.7V, and it can be reliably turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 8mΩ at a gate voltage of 4.5V and 6mΩ at a gate voltage of 10V, and it can provide a continuous drain current (ID) of up to 70A.
**Model: B434-VB**
B434-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for various power management and switching applications. Manufactured using advanced Trench technology, the device has low on-resistance and high current capability, and can provide efficient switching performance at low voltage. The B434-VB can withstand drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V, while providing high performance, ensuring safe and stable operation. Its threshold voltage (Vth) is 1.7V, and it can be reliably turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 8mΩ at a gate voltage of 4.5V and 6mΩ at a gate voltage of 10V, and it can provide a continuous drain current (ID) of up to 70A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 8(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: B434-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- @VGS = 4.5V: 8mΩ
- @VGS = 10V: 6mΩ
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: B434-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- @VGS = 4.5V: 8mΩ
- @VGS = 10V: 6mΩ
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**Power management module**: The high current capability and low on-resistance of B434-VB make it an ideal power management solution, such as DC-DC converters and load switches. In these applications, this MOSFET can effectively reduce power consumption, improve system efficiency, and meet the needs of high performance and compact design.
**Motor drive**: In motor control applications, the low RDS(ON) and high current handling capability of B434-VB can achieve efficient current transmission and fast switching operation. This is particularly important for motor drive modules in electric vehicles, robots and industrial automation, which can provide stable and efficient motor control.
**LED driver**: B434-VB is suitable for LED drive circuits, especially in applications requiring efficient constant current control. Its low on-resistance characteristics enable it to reduce energy loss and ensure stable operation of LED lamps under various conditions.
**Solar inverter**: In solar power generation systems, B434-VB can be used as a switching element of the inverter. Its high efficiency and high reliability characteristics enable it to reduce energy loss during the conversion process and improve the energy efficiency of the overall system.
**Charging Equipment**: B434-VB is also widely used in various chargers and adapters, especially those that require efficient and reliable current control. Its high current handling capability and low on-resistance ensure a fast and safe charging process.
**Power management module**: The high current capability and low on-resistance of B434-VB make it an ideal power management solution, such as DC-DC converters and load switches. In these applications, this MOSFET can effectively reduce power consumption, improve system efficiency, and meet the needs of high performance and compact design.
**Motor drive**: In motor control applications, the low RDS(ON) and high current handling capability of B434-VB can achieve efficient current transmission and fast switching operation. This is particularly important for motor drive modules in electric vehicles, robots and industrial automation, which can provide stable and efficient motor control.
**LED driver**: B434-VB is suitable for LED drive circuits, especially in applications requiring efficient constant current control. Its low on-resistance characteristics enable it to reduce energy loss and ensure stable operation of LED lamps under various conditions.
**Solar inverter**: In solar power generation systems, B434-VB can be used as a switching element of the inverter. Its high efficiency and high reliability characteristics enable it to reduce energy loss during the conversion process and improve the energy efficiency of the overall system.
**Charging Equipment**: B434-VB is also widely used in various chargers and adapters, especially those that require efficient and reliable current control. Its high current handling capability and low on-resistance ensure a fast and safe charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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