B412L-VB Product details
Product introduction:
B412L-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET supports a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A. When VGS is 4.5V and 10V, its on-resistance (RDS(on)) is 23mΩ and 10mΩ respectively. Using Trench technology, this MOSFET provides extremely low on-resistance and good switching performance, which is very suitable for circuit designs requiring high power density and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 23(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description: **
- **Model**: B412L-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(on))**:
- 23mΩ (at VGS=4.5V)
- 10mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 100A
**Detailed parameter description: **
- **Model**: B412L-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(on))**:
- 23mΩ (at VGS=4.5V)
- 10mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 100A
Domain and module applications:
1. High-Power Switching Power Supplies: Due to its high current carrying capacity and low on-resistance, the B412L-VB is suitable for high-power switching power supplies, which can significantly improve system efficiency and reduce heat generation.
2. Electric Vehicles: In the battery management and power control systems of electric vehicles, this MOSFET can handle high voltage and high current loads, ensuring high efficiency and stability of the system.
3. Industrial Motor Drives: Suitable for use in industrial motor drive systems, it provides stable switching performance and high current handling capabilities to improve overall system performance.
4. Power Management Systems: In power management systems, the B412L-VB can effectively control high current loads, provide efficient performance and stability, and reduce power consumption and heat dissipation requirements.
Technical support:
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