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B296L-VB Product details
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Product Introduction
**B296L-VB** is a unipolar N-channel MOSFET in TO263 package. It uses Trench technology and has low on-resistance and high current carrying capacity. This MOSFET is designed for applications requiring high voltage and high current. It can provide reliable performance at medium voltage and is suitable for various high-power power electronic systems.
**B296L-VB** is a unipolar N-channel MOSFET in TO263 package. It uses Trench technology and has low on-resistance and high current carrying capacity. This MOSFET is designed for applications requiring high voltage and high current. It can provide reliable performance at medium voltage and is suitable for various high-power power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 23(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description
- **Model**: B296L-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: B296L-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
**B296L-VB** MOSFET performs well in the following fields and modules:
1. **Switching power supply**: Its low on-resistance and high current handling capability make it very suitable for use in high-efficiency switching power supplies, improving power conversion efficiency and reducing energy loss.
2. **DC-DC converter**: In DC-DC converter applications, this MOSFET can handle higher current loads, ensuring stable and efficient power conversion.
3. **Motor drive system**: Suitable for motor drive applications, it can provide stable switching performance at medium voltage and improve the overall efficiency of the motor system.
4. **LED drive**: In LED drive circuits, B296L-VB provides reliable current output, suitable for driving medium and high power LEDs.
5. **Power management system**: In power management systems, this MOSFET can be used for switching and regulating medium voltage loads, improving system stability and performance.
**B296L-VB** MOSFET performs well in the following fields and modules:
1. **Switching power supply**: Its low on-resistance and high current handling capability make it very suitable for use in high-efficiency switching power supplies, improving power conversion efficiency and reducing energy loss.
2. **DC-DC converter**: In DC-DC converter applications, this MOSFET can handle higher current loads, ensuring stable and efficient power conversion.
3. **Motor drive system**: Suitable for motor drive applications, it can provide stable switching performance at medium voltage and improve the overall efficiency of the motor system.
4. **LED drive**: In LED drive circuits, B296L-VB provides reliable current output, suitable for driving medium and high power LEDs.
5. **Power management system**: In power management systems, this MOSFET can be used for switching and regulating medium voltage loads, improving system stability and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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