中文
English
B262L-VB Product details
Back to previous pageProduct introduction：
**Product Introduction**
The B262L-VB is a high current, high performance single N-channel field effect transistor (MOSFET) in a TO-263 package and Trench process. Designed for efficient power management and load drive applications, this MOSFET is capable of handling drain-source voltages up to 60V, providing excellent low on-resistance and high current handling capabilities. Its low R_DS(ON) characteristics enable it to excel at high current conditions, making it suitable for a variety of application scenarios that require efficient switching performance.
The B262L-VB is a high current, high performance single N-channel field effect transistor (MOSFET) in a TO-263 package and Trench process. Designed for efficient power management and load drive applications, this MOSFET is capable of handling drain-source voltages up to 60V, providing excellent low on-resistance and high current handling capabilities. Its low R_DS(ON) characteristics enable it to excel at high current conditions, making it suitable for a variety of application scenarios that require efficient switching performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 12(mΩ) | 3.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description**
- **Model**: B262L-VB
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- At 4.5V: 12mΩ
- At 10V: 3.2mΩ
- **Maximum leakage current (I_D)**: 210A
- **Technology**: Trench process
Domain and module applications：
Applications and modules
1. Power management systems: B262L-VB is suitable for high-efficiency DC-DC converters and power supply systems, capable of handling high current loads while optimizing power conversion efficiency and reducing power consumption.
2. Electric vehicles: In battery management systems and motor drives for electric vehicles, this MOSFET is capable of handling high currents and high loads, improving the overall performance and stability of the system.
3. Industrial drive applications: Used in industrial motor drive systems, it provides high current control and low on-resistance, helping to improve the efficiency and reliability of motor drives.
4. High-power power supplies: Suitable for high-power power supply and load drive applications, capable of working stably under high current and high voltage conditions, improving system performance and reliability.
1. Power management systems: B262L-VB is suitable for high-efficiency DC-DC converters and power supply systems, capable of handling high current loads while optimizing power conversion efficiency and reducing power consumption.
2. Electric vehicles: In battery management systems and motor drives for electric vehicles, this MOSFET is capable of handling high currents and high loads, improving the overall performance and stability of the system.
3. Industrial drive applications: Used in industrial motor drive systems, it provides high current control and low on-resistance, helping to improve the efficiency and reliability of motor drives.
4. High-power power supplies: Suitable for high-power power supply and load drive applications, capable of working stably under high current and high voltage conditions, improving system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
