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B2608L-VB Product details
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**Product Introduction:**
B2608L-VB is a high-performance N-channel MOSFET packaged in TO263, designed for high voltage and high current applications. This MOSFET provides a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 150A. When VGS is 10V, its on-resistance (RDS(on)) is 4mΩ. Using Trench technology, this MOSFET has extremely low on-resistance and excellent switching performance, which is very suitable for high power density and high efficiency electronic circuit design.
B2608L-VB is a high-performance N-channel MOSFET packaged in TO263, designed for high voltage and high current applications. This MOSFET provides a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 150A. When VGS is 10V, its on-resistance (RDS(on)) is 4mΩ. Using Trench technology, this MOSFET has extremely low on-resistance and excellent switching performance, which is very suitable for high power density and high efficiency electronic circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description: **
- **Model**: B2608L-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(on))**:
- 4mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: B2608L-VB
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(on))**:
- 4mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
**Application areas and module examples:**
1. **High-Power Power Systems**: Due to its low on-resistance and high current capability, the B2608L-VB is suitable for high-power power systems, providing efficient power conversion and low heat dissipation.
2. **Electric Vehicles**: In the battery management and power control systems of electric vehicles, this MOSFET can handle high current loads to ensure system stability and efficiency.
3. **Industrial Motor Drives**: Suitable for use in industrial motor drive systems, it provides stable switching performance and high current handling capabilities to improve overall system performance.
4. **Efficient Switching Power Supplies**: In efficient switching power supply applications, the ultra-low RDS(on) of the B2608L-VB can significantly improve the system's energy efficiency, reduce power losses and heat dissipation requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
