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B21NM50N-VB TO263 Product details
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Product Introduction
**Model**: B21NM50N-VB
**Package**: TO263
**Configuration**: Unipolar N-channel MOSFET
**Withstand voltage**: 650V
**Gate-source voltage**: ±30V
**Threshold voltage**: 3.5V
**On-resistance**: 160mΩ @ V_GS = 10V
**Maximum drain current**: 20A
**Technology**: SJ_Multi-EPI
**Model**: B21NM50N-VB
**Package**: TO263
**Configuration**: Unipolar N-channel MOSFET
**Withstand voltage**: 650V
**Gate-source voltage**: ±30V
**Threshold voltage**: 3.5V
**On-resistance**: 160mΩ @ V_GS = 10V
**Maximum drain current**: 20A
**Technology**: SJ_Multi-EPI
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: B21NM50N-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Model**: B21NM50N-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**
The high withstand voltage capability and stability of the B21NM50N-VB make it suitable for high-voltage switching power supplies, which are used to handle high voltage and high power, and provide efficient power conversion and protection.
2. **Inverter**
Due to its high withstand voltage and moderate on-resistance, this MOSFET can be used in inverters to help convert DC to AC, and is widely used in solar inverters and industrial inverters.
3. **Power control system**
In various power control systems such as motor drives and industrial equipment, the high voltage withstand capability of the B21NM50N-VB can provide reliable switching functions and stable power control.
4. **Welding equipment**
The high withstand voltage and power handling capabilities of this MOSFET make it suitable for use as a switching element in welding equipment, ensuring stability and safety during high voltage operation.
1. **High-voltage switching power supply**
The high withstand voltage capability and stability of the B21NM50N-VB make it suitable for high-voltage switching power supplies, which are used to handle high voltage and high power, and provide efficient power conversion and protection.
2. **Inverter**
Due to its high withstand voltage and moderate on-resistance, this MOSFET can be used in inverters to help convert DC to AC, and is widely used in solar inverters and industrial inverters.
3. **Power control system**
In various power control systems such as motor drives and industrial equipment, the high voltage withstand capability of the B21NM50N-VB can provide reliable switching functions and stable power control.
4. **Welding equipment**
The high withstand voltage and power handling capabilities of this MOSFET make it suitable for use as a switching element in welding equipment, ensuring stability and safety during high voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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